The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.
Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment
Open accessAbstract
The physical property investigation (like transport measurements) and ultimate application of the topological insulators usually involve surfaces that are exposed to ambient environment (1 atm and room temperature). One critical issue is how the topological surface state will behave under such ambient conditions. We report high resolution angle-resolved photoemission measurements to directly probe the surface state of the prototypical topological insulators, Bi 2 Se 3 and Bi 2 Te 3 , upon exposing to various environments. We find that the topological order is robust even when the surface is exposed to air at room temperature. However, the surface state is strongly modified after such an exposure. Particularly, we have observed the formation of two-dimensional quantum well states near the exposed surface of the topological insulators. These findings provide key information in understanding the surface properties of the topological insulators under ambient environment and in engineering the topological surface state for applications.
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Cites
Topological insulators and superconductors
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Self-citationTopological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
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Self-citationSuperconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator
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Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
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Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3
Chen, Y. L., Analytis, J. G., Chu, J.-H., Liu, Z. K., Mo, S.-K., Qi, X. L., Zhang, H. J., Lu, D. H., Dai, X., Fang, Z., et al. (2009) · Science · doi:10.1126/science.1173034 · Cited by 3,585
Self-citationA topological Dirac insulator in a quantum spin Hall phase
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Self-citationTopological surface states protected from backscattering by chiral spin texture
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Two-dimensional surface state in the quantum limit of a topological insulator
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Cited by
Thickness-Independent Transport Channels in Topological InsulatorBi2Se3Thin Films
Bansal, N., Kim, Y. S., Brahlek, M., Edrey, E., & Oh, S. (2012) · Physical Review Letters · doi:10.1103/physrevlett.109.116804 · Cited by 364
Emergent quantum confinement at topological insulator surfaces
Bahramy, M. S., King, P. D. C., de la Torre, A., Chang, J., Shi, M., Patthey, L., Balakrishnan, G., Hofmann, P., Arita, R., Nagaosa, N., et al. (2012) · Nature Communications · doi:10.1038/ncomms2162 · Cited by 286
Evidence of Topological Surface State in Three-Dimensional Dirac Semimetal Cd3As2
Yi, H., Wang, Z., Chen, C., Shi, Y., Feng, Y., Liang, A., Xie, Z., He, S., He, J., Peng, Y., et al. (2014) · Scientific Reports · doi:10.1038/srep06106 · Cited by 190
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Metadata
- Authors
- Chen, C., He, S., Weng, H., Zhang, W., Zhao, L., Liu, H., Jia, X., Mou, D., Liu, S., He, J., Peng, Y., Feng, Y., Xie, Z., Liu, G., Dong, X., Zhang, J., Wang, X., Peng, Q., Wang, Z., Zhang, S., Yang, F., Chen, C., Xu, Z., Dai, X., Fang, Z., & Zhou, X. J.
- Venue
- Proceedings of the National Academy of Sciences
- Published
- 2012-02-21
- Volume
- 109
- Issue
- 10
- Pages
- 3694-3698
- ISSN
- 0027-8424 (ISSN-L)
- 1091-6490
- OpenAlex
- W2109468130
- Cited by
- 185
- References
- 15
- FWCI
- 9.14
- Type
- journal article
- Language
- en
- Open access
- green
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- Chen, C., He, S., Weng, H., Zhang, W., Zhao, L., Liu, H., Jia, X., Mou, D., Liu, S., He, J., Peng, Y., Feng, Y., Xie, Z., Liu, G., Dong, X., Zhang, J., Wang, X., Peng, Q., Wang, Z., . . . Zhou, X. J. (2012). Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment. Proceedings of the National Academy of Sciences. https://doi.org/10.1073/pnas.1115555109
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