Optimisation of GaAs nanocrystals synthesis by laser ablation in water
Open accessAbstract
Laser ablation of a gallium arsenide (GaAs) wafer immersed in distilled water was carried out using the fundamental wavelength of a high frequency Nd:YAG laser with 240 ns pulse duration. Rate of nanoparticles generation through laser ablation for various amounts of laser pulse energies (0.4–0.94 mJ) and repetition rates (400–2000 Hz) were studied and a maximum ablation rate of 19.6 µgr/s was obtained. Formation of the pure GaAs nanocrystals (NCs) is confirmed using TEM micrograph and X-ray diffraction analysis. Band-gap energy of generated GaAs NCs is calculated by Tauc method to be between 2.48 and 2.60 eV which is larger than the band-gap energy of bulk GaAs. The band-gap energy of NCs is increased by increasing the energy of laser pulses and is decreased by increasing the pulse repetition rate.
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Sharifi et al. synthesised GaAs nanocrystals using PLA of a GaAs wafer in liquid, obtaining pure nanocrystals with a bandgap larger than the bulk composite itself.
“Sharifi et al. [190] synthesised GaAs nanocrystals using PLA of a GaAs wafer in liquid. Using this method, pure nanocrystals are obtained with a bandgap larger than the bulk composite itself.”
Cites
Bärsch, N., Jakobi, J., Weiler, S., & Barcikowski, S. (2009) · Nanotechnology · doi:10.1088/0957-4484/20/44/445603 · Cited by 122 · see citing works
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Streubel, R., Barcikowski, S., & Gökce, B. (2016) · Optics Letters · doi:10.1364/ol.41.001486 · Cited by 283 · see citing works
Subhan, A., Mourad, A.-H. I., & Al-Douri, Y. (2022) · Nanomaterials · doi:10.3390/nano12132144 · Cited by 95 · see citing works
“[190] synthesised GaAs nanocrystals using PLA of a GaAs wafer in liquid.”
Method
- Authors
- Sharifi, T., Dorranian, D., & Torkamany, M. J.
- Affiliations
- Islamic Azad University, Tehran (IR)
- Iranian National Center for Laser Science and Techology (IR)
- Corresponding author
- Torkamany, M.J.
- Venue
- Journal of Experimental Nanoscience
- Publisher
- Informa UK Limited
- Published
- 2013-08
- Volume
- 8
- Issue
- 6
- Pages
- 808-817
- ISSN
- 1745-8080 (ISSN-L)
- 1745-8099
- OpenAlex
- W1971164384
- Cited by
- 16
- References
- 1
- Citations by year
- 2025: 1 · 2023: 3 · 2022: 2 · 2020: 2 · 2018: 2 · 2016: 3 · 2015: 1 · 2013: 2
- FWCI
- 0.55
- Type
- journal article
- Language
- en
- Update notices
- correction (2014-12-13)
- Open access
- bronze
- doi.org
- Locations
- Journal of Experimental Nanoscience (publishedVersion)
- Topics
- Physical Sciences › Engineering › Biomedical Engineering › Laser-Ablation Synthesis of Nanoparticles
- Physical Sciences › Materials Science › Materials Chemistry › Silicon Nanostructures and Photoluminescence
- Physical Sciences › Materials Science › Materials Chemistry › Quantum Dots Synthesis And Properties
- Keywords
- GaAs, GaAs nanocrystals, laser ablation in liquid, water, nanoparticle synthesis, ablation rate, pulse energy, pulse repetition rate, band gap, Tauc method, Nd:YAG laser
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