The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Condensation of excitons in germanium and silicon
Abstract
The ground state energy of an electron-hole plasma in a Ge type semiconductor is calculated with the help of the 'improved RPA' approximation of Nozieres and Pines (1958). The detailed band structure is taken into account, except for the warping of the valence band. That is, the effects of the anisotropy, of the valence band coupling and of the multivalley structure are discussed, and are found to stabilize the plasma. The numerical results for Ge and Si are in very good agreement with experiments, which provides a check for the validity of the 'improved RPA' approximation.
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Citations
Cites
Motion of Electrons and Holes in Perturbed Periodic Fields
Luttinger, J. M., & Kohn, W. (1955) · Physical Review · doi:10.1103/physrev.97.869 · Cited by 3,088
Cited by
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Electron-Hole Liquids in Semiconductors
Brinkman, W. F., & Rice, T. M. (1973) · Physical Review B · doi:10.1103/physrevb.7.1508 · Cited by 470
Density-functional calculation of sub-band structure in accumulation and inversion layers
Ando, T. (1976) · Physical Review B · doi:10.1103/physrevb.13.3468 · Cited by 269
Metadata
- Authors
- Combescot, M., & Nozieres, P.
- Venue
- Journal of Physics C: Solid State Physics
- Publisher
- IOP Publishing
- Published
- 1972-09-05
- Volume
- 5
- Issue
- 17
- Pages
- 2369-2391
- ISSN
- 0022-3719 (ISSN-L)
- OpenAlex
- W2063228760
- Cited by
- 258
- References
- 1
- FWCI
- 17.32
- Type
- journal article
- Language
- en
- Open access
- closed
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- Combescot, M., & Nozieres, P. (1972). Condensation of excitons in germanium and silicon. Journal of Physics C: Solid State Physics. https://doi.org/10.1088/0022-3719/5/17/014
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