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Cited by 258

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Condensation of excitons in germanium and silicon

Combescot, M, Nozieres, P·1972·Journal of Physics C: Solid State Physics

Abstract

The ground state energy of an electron-hole plasma in a Ge type semiconductor is calculated with the help of the 'improved RPA' approximation of Nozieres and Pines (1958). The detailed band structure is taken into account, except for the warping of the valence band. That is, the effects of the anisotropy, of the valence band coupling and of the multivalley structure are discussed, and are found to stabilize the plasma. The numerical results for Ge and Si are in very good agreement with experiments, which provides a check for the validity of the 'improved RPA' approximation.

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Metadata

Authors
Combescot, M., & Nozieres, P.
Venue
Journal of Physics C: Solid State Physics
Published
1972-09-05
Volume
5
Issue
17
Pages
2369-2391
ISSN
0022-3719 (ISSN-L)
OpenAlex
W2063228760
Cited by
258
References
1
FWCI
17.32
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Condensation of excitons in germanium and silicon. https://app.cochat.ai/papers/10.1088/0022-3719/5/17/014
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Combescot, M., & Nozieres, P. (1972). Condensation of excitons in germanium and silicon. Journal of Physics C: Solid State Physics. https://doi.org/10.1088/0022-3719/5/17/014

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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