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Cited by 269

The DOI matches its Crossref record; 31 of the 31 references it cites were found in a registry or an index.

Density-functional calculation of sub-band structure in accumulation and inversion layers

Ando, T.·1976·Physical Review B

Abstract

The Hohenberg-Kohn-Sham theory of an inhomogeneous electron gas is applied to the calculation of the subband structure of accumulation and inversion layers on the Si (100) surface. The exchange-correlation effect is shown to be very important and lower the sub-band energies considerably. Especially in accumulation layers the first excited sub-band really becomes a bound state in contrast to the result of the Hartree approximation. The agreement between the theory and experimental results of inter-sub-band optical transitions is satisfactory. The effective mass and the $g$ factor are also calculated.

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Metadata

Authors
Ando, T.
Venue
Physical Review B
Published
1976-04-15
Volume
13
Issue
8
Pages
3468-3477
ISSN
0556-2805 (ISSN-L)
OpenAlex
W1977389106
Cited by
269
References
31
FWCI
16.42
Type
journal article
Language
en
Open access
closed

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Ando, T. (1976). Density-functional calculation of sub-band structure in accumulation and inversion layers. Physical Review B. https://doi.org/10.1103/physrevb.13.3468

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