Cited by 398Topological Materials and Phenomena2D Materials and ApplicationsAdvanced Condensed Matter Physics

Effective continuous model for surface states and thin films of three-dimensional topological insulators

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Shan, Wen-Yu, Lu, Hai-Zhou, Shen, Shun-Qing·2010·New Journal of Physics

Abstract

Two-dimensional (2D) effective continuous models are derived for the surface states and thin films of a three-dimensional topological insulator (3DTI). Starting from an effective model for 3DTI based on first-principles calculations (Zhang et al 2009 Nat. Phys. 5 438), we present solutions for both the surface states in a semi-infinite boundary condition and those in a thin film with finite thickness. The coupling between opposite topological surfaces and structure inversion asymmetry (SIA) gives rise to gapped Dirac hyperbolas with Rashba-like splittings in the energy spectrum. In addition, SIA leads to asymmetric distributions of wavefunctions for the surface states along the film growth direction, making some branches in the energy spectra much harder than others to probe by light. These features agree well with the recent angle-resolved photoemission spectra of Bi 2 Se 3 films grown on SiC substrate (Zhang et al 2009 arXiv:0911.3706). More importantly, using the parameters fitted by experimental data, the result indicates that the thin film Bi 2 Se 3 lies in the quantum spin Hall (QSH) region based on the calculation of the Chern number and Z 2 invariant. In addition, strong SIA always tends to destroy the QSH state.

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  • In the thin film limit, the three-dimensional topological insulator model reduces exactly to the two-dimensional topological insulator model by BHZ.

    “Interestingly, in the thin film limit, the 3D TI model reduces exactly to the 2D TI model by BHZ[32-34].”

    From Model Hamiltonian for topological insulators (2010) · cites this paper as [32]

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Research works printed but not linked: 29

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Authors
Shan, W.-Y., Lu, H.-Z., & Shen, S.-Q.
Affiliations
University of Hong Kong (HK)
Corresponding author
Lu, Hai-Zhou
Venue
New Journal of Physics
Published
2010-04-28
Volume
12
Issue
4
Pages
043048
ISSN
1367-2630 (ISSN-L)
OpenAlex
W2114885058
Cited by
398
References
13
Citations by year
2026: 11 · 2025: 17 · 2024: 18 · 2023: 19 · 2022: 24 · 2021: 34 · 2020: 24 · 2019: 17 · 2018: 28 · 2017: 29 · 2016: 23 · 2015: 20 · 2014: 31 · 2013: 36 · 2012: 31
FWCI
17.63
Type
journal article
Language
en
Open access
Licence
cc-by
Locations
  • New Journal of Physics (publishedVersion, cc-by)
  • arXiv (Cornell University) (submittedVersion)
  • The HKU Scholars Hub (University of Hong Kong) (submittedVersion)
  • arXiv (Cornell University)
Topics
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
  • Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Advanced Condensed Matter Physics
Keywords
three-dimensional topological insulators, surface states, thin films, Bi2Se3, structure inversion asymmetry, quantum spin Hall effect, Chern number, Z2 topological invariant, angle-resolved photoemission

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