Merged-Element Transmons: Design and Qubit Performance

Abstract

We demonstrate a superconducting transmon qubit in which a Josephson junction has been engineered to act as its own parallel shunt capacitor. This merged-element transmon potentially offers a smaller footprint than conventional transmons. Because it concentrates the electromagnetic energy inside the junction, it reduces the relative electric field participation from other interfaces. By combining micrometer-scale $\mathrm{Al}$/$\mathrm{Al}\mathrm{O}$${}_{x}$/$\mathrm{Al}$ junctions with long oxidations, we produce functional devices with ${E}_{J}/{E}_{C}$ in the low-transmon regime (${E}_{J}/{E}_{C}\ensuremath{\lesssim}30$). Cryogenic $I$-$V$ measurements show a sharp $dI/dV$ structure with low subgap conduction. Qubit spectroscopy of tunable versions shows a small number of avoided level crossings, suggesting the presence of two-level systems. We observe mean ${T}_{1}$ times typically in the range of $10--90\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}\mathrm{s}$, with some annealed devices exhibiting ${T}_{1}>100\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}\mathrm{s}$ over several hours. The results suggest that energy relaxation in conventional small-junction transmons is not limited by junction loss.