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Effect of heavy doping on the optical properties and the band structure of silicon
Abstract
We have measured by ellipsometry the dielectric constant of pure and heavily doped $n$- and $p$- type silicon from 1.8 to 5.6 eV. Both ion-implanted laser-annealed and bulk doped samples were used with concordant results. A red shift of the ${E}_{1}$ and ${E}_{2}$ critical-point energies, together with a decrease in the excitonic interaction at the ${E}_{1}$ energy, has been observed. These results are compared with first- and second-order perturbation-theory calculations of the effect of the impurities on the band structure of silicon.
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Cited by
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Lautenschlager, P., Garriga, M., Logothetidis, S., & Cardona, M. (1987) · Physical Review B · doi:10.1103/physrevb.35.9174 · Cited by 846
Self-citationAttosecond band-gap dynamics in silicon
Schultze, M., Ramasesha, K., Pemmaraju, C. D., Sato, S. A., Whitmore, D., Gandman, A., Prell, J. S., Borja, L. J., Prendergast, D., Yabana, K., et al. (2014) · Science · doi:10.1126/science.1260311 · Cited by 553
Straggling in thin silicon detectors
Bichsel, H. (1988) · Reviews of Modern Physics · doi:10.1103/revmodphys.60.663 · Cited by 402
Kasic, A., Schubert, M., Einfeldt, S., Hommel, D., & Tiwald, T. E. (2000) · Physical Review B · doi:10.1103/physrevb.62.7365 · Cited by 259
Real-Time Probing of Electron Dynamics Using Attosecond Time-Resolved Spectroscopy
Ramasesha, K., Leone, S. R., & Neumark, D. M. (2016) · Annual Review of Physical Chemistry · doi:10.1146/annurev-physchem-040215-112025 · Cited by 225
Metadata
- Authors
- Viña, L., & Cardona, M.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1984-06-15
- Volume
- 29
- Issue
- 12
- Pages
- 6739-6751
- ISSN
- 0163-1829 (ISSN-L)
- OpenAlex
- W2024706078
- Cited by
- 160
- References
- 0
- FWCI
- 10.28
- Type
- journal article
- Language
- en
- Open access
- closed
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- Viña, L., & Cardona, M. (1984). Effect of heavy doping on the optical properties and the band structure of silicon. Physical Review B. https://doi.org/10.1103/physrevb.29.6739
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