Cited by 553Laser-Matter Interactions and Applications2D Materials and ApplicationsTerahertz technology and applications

Attosecond band-gap dynamics in silicon

Schultze, Martin, Ramasesha, Krupa, Pemmaraju, C.D., Sato, S.A., Whitmore, D., Gandman, A., Prell, James S., Borja, L. J. +4 more·2014·Science

Abstract

Electron transfer from valence to conduction band states in semiconductors is the basis of modern electronics. Here, attosecond extreme ultraviolet (XUV) spectroscopy is used to resolve this process in silicon in real time. Electrons injected into the conduction band by few-cycle laser pulses alter the silicon XUV absorption spectrum in sharp steps synchronized with the laser electric field oscillations. The observed ~450-attosecond step rise time provides an upper limit for the carrier-induced band-gap reduction and the electron-electron scattering time in the conduction band. This electronic response is separated from the subsequent band-gap modifications due to lattice motion, which occurs on a time scale of 60 ± 10 femtoseconds, characteristic of the fastest optical phonon. Quantum dynamical simulations interpret the carrier injection step as light-field–induced electron tunneling.

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Crossref · 10.1126/science.1260311

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53 of 53 references verified0 citation errors · 0 not checkable

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  • Remarkable results for photoemission delays from orbitals, electronic timescales of dielectric properties, and band gap excitation provide compelling evidence that attosecond methods will continue to address new frontiers in dynamics.

    “Remarkable results for photoemission delays from orbitals, electronic timescales of dielectric properties [213] and band gap excitation [214] provide compelling evidence that attosecond methods will continue to address new frontiers in dynamics.”

    From Roadmap of ultrafast x-ray atomic and molecular physics (2018) · cites this paper as [214]

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Authors
Schultze, M., Ramasesha, K., Pemmaraju, C. D., Sato, S. A., Whitmore, D., Gandman, A., Prell, J. S., Borja, L. J., Prendergast, D., Yabana, K., Neumark, D. M., & Leone, S. R.
Affiliations
  • Ludwig-Maximilians-Universität München (DE)
  • University of California, Berkeley (US)
  • Lawrence Berkeley National Laboratory (US)
  • University of Tsukuba (JP)
Corresponding author
  • Schultze, Martin
  • Ramasesha, Krupa
  • Neumark, Daniel M.
  • Leone, Stephen R.
Venue
Science
Published
2014-12-12
Volume
346
Issue
6215
Pages
1348-1352
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W2086867887
Cited by
553
References
53
Citations by year
2026: 25 · 2025: 43 · 2024: 41 · 2023: 42 · 2022: 43 · 2021: 54 · 2020: 52 · 2019: 55 · 2018: 65 · 2017: 59 · 2016: 52 · 2015: 20 · 2014: 2
FWCI
21.97
Type
journal article
Language
en
Open access
closed
Locations
  • Science (publishedVersion)
  • PubMed (publishedVersion)
  • MPG.PuRe (Max Planck Society) (submittedVersion)
Funders
Japan Society for the Promotion of Science (23340113, 14J01511, 25104702)
Topics
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Laser-Matter Interactions and Applications
  • Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
Keywords
attosecond dynamics, silicon, optical phonons, charge injection, electron tunneling, few-cycle pulses, quantum dynamical simulation

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