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Cited by 1,917

The DOI matches its Crossref record; 23 of the 23 references it cites were found in a registry or an index.

Hopping Conductivity in Disordered Systems

Ambegaokar, Vinay, Halperin, B. I., Langer, J. S.·1971·Physical Review B
DOI 10.1103/physrevb.4.2612
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Abstract

By considering a model in which charge is transported via phonon-induced tunneling of electrons between localized states which are randomly distributed in energy and position, Mott has obtained an electrical conductivity of the form $\ensuremath{\sigma}\ensuremath{\propto}\mathrm{exp}[\ensuremath{-}{(\frac{\ensuremath{\lambda}{\ensuremath{\alpha}}^{3}}{{\ensuremath{\rho}}_{0}\mathrm{kT}})}^{\frac{1}{4}}]$. Here $T$ is the temperature of the system, ${\ensuremath{\rho}}_{0}$ is the density of states at the Fermi level, $\ensuremath{\lambda}$ is a dimensionless constant, and ${\ensuremath{\alpha}}^{\ensuremath{-}1}$ is the distance for exponential decay of the wave functions. We rederive these results, relating $\ensuremath{\lambda}$ to the critical density of a certain dimensionless percolation problem, and we estimate $\ensuremath{\lambda}$ to be approximately 16. The applicability of the model to experimental observations on amorphous Ge, Si, and C is discussed.

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Metadata

Authors
Ambegaokar, V., Halperin, B. I., & Langer, J. S.
Venue
Physical Review B
Publisher
American Physical Society (APS)
Published
1971-10-15
Volume
4
Issue
8
Pages
2612-2620
ISSN
0556-2805 (ISSN-L)
DOI
10.1103/physrevb.4.2612
OpenAlex
W2087375600
Cited by
1,917
References
23
FWCI
26.42
Type
journal article
Language
en
Open access
closed

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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