The DOI matches its Crossref record; 9 of the 9 references it cites were found in a registry or an index.
Experimental and theoretical determination of the electronic structure and optical properties of three phases ofZrO2
Abstract
The addition of suitable dopants to ${\mathrm{ZrO}}_{2}$ can induce dramatic phase stabilization, and this dopant-induced phase stabilization is the basis of transformation toughening of zirconia-based structural ceramics. We have determined the electronic structure of three phases of ${\mathrm{ZrO}}_{2}$, cubic, tetragonal, and monoclinic, using vacuum-ultraviolet and x-ray-photoemission spectroscopies, coupled with ab initio band-structure and optical property calculations using the orthogonalized linear-combination-of-atomic-orbitals method, in an attempt to understand the complex interaction of the stabilizing dopants and associated atomic defects with the crystal structures of ${\mathrm{ZrO}}_{2}$ and their phase transitions. The experimental samples were single or polycrystalline stabilized materials which contain atomic defects, while the calculations were performed for undoped idealized ${\mathrm{ZrO}}_{2}$ structures without atomic defects. Reasonable agreement is found between experiment and theory at this level. The primary difference among the three phases of ${\mathrm{ZrO}}_{2}$ is the hybridization or mixing of the Zr 4d (${\mathit{x}}^{2}$-${\mathit{y}}^{2}$ and ${\mathit{z}}^{2}$) and the Zr 4d (xy, yz, and zx) bands, which form the conduction bands as the symmetry decreases from cubic to monoclinic. This leads to a complex evolution of the O 2p to Zr 4d and the O 2s to Zr 4d interband transitions. In addition, in the real materials, the presence of yttrium stabilizer introduces additional Y 4p valence bands and Y 4d conduction bands. The effective coordination of zirconium by oxygen is reduced from eightfold to sevenfold by the presence of the stabilizing ions and defects and this leads to the introduction of an occupied Zr 4d valence band suggestive of the presence of ${\mathrm{Zr}}^{2+}$.
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Cites
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Self-citationTransformation Toughening in ZrO 2 ‐Containing Ceramics
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Self-citationTheoretical Studies of the Electronic Properties of Ceramic Materials
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Self-citationRoom-temperature optical absorption in undoped α-Al2O3
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Band offsets of wide-band-gap oxides and implications for future electronic devices
Robertson, J. (2000) · Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena · doi:10.1116/1.591472 · Cited by 2,049
Phonons and lattice dielectric properties of zirconia
Zhao, X., & Vanderbilt, D. (2002) · Physical Review B · doi:10.1103/physrevb.65.075105 · Cited by 543
Growth, dielectric properties, and memory device applications of ZrO2 thin films
Panda, D., & Tseng, T.-Y. (2013) · Thin Solid Films · doi:10.1016/j.tsf.2013.01.004 · Cited by 300
Chang, J. P., Lin, Y.-S., & Chu, K. (2001) · Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena · doi:10.1116/1.1396639 · Cited by 102
Jasieniak, J., Pacifico, J., Signorini, R., Chiasera, A., Ferrari, M., Martucci, A., & Mulvaney, P. (2007) · Advanced Functional Materials · doi:10.1002/adfm.200600955 · Cited by 79
Metadata
- Authors
- French, R. H., Glass, S. J., Ohuchi, F. S., Xu, Y. N., & Ching, W. Y.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1994-02-15
- Volume
- 49
- Issue
- 8
- Pages
- 5133-5142
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2033923136
- Cited by
- 548
- References
- 9
- FWCI
- 3.36
- Type
- journal article
- Language
- en
- Open access
- closed
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