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Self-Consistent Results forn-Type Si Inversion Layers

Stern, Frank·1972·Physical Review B

Abstract

Self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$-type silicon. Quantum effects are taken into account in the effective-mass approximation, and the envelope wave function is assumed to vanish at the surface. Approximate analytic results are given for some special cases. Numerical results are given for representative surface orientations, bulk acceptor concentrations, inversion-layer electron concentrations, and temperatures.

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Metadata

Authors
Stern, F.
Venue
Physical Review B
Published
1972-06-15
Volume
5
Issue
12
Pages
4891-4899
ISSN
0556-2805 (ISSN-L)
OpenAlex
W2094484501
Cited by
1,176
References
0
FWCI
28.35
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Self-Consistent Results forn-Type Si Inversion Layers. https://app.cochat.ai/papers/10.1103/physrevb.5.4891
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Stern, F. (1972). Self-Consistent Results forn-Type Si Inversion Layers. Physical Review B. https://doi.org/10.1103/physrevb.5.4891

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