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Self-Consistent Results forn-Type Si Inversion Layers
Abstract
Self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$-type silicon. Quantum effects are taken into account in the effective-mass approximation, and the envelope wave function is assumed to vanish at the surface. Approximate analytic results are given for some special cases. Numerical results are given for representative surface orientations, bulk acceptor concentrations, inversion-layer electron concentrations, and temperatures.
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Citations
Cited by
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Self-citationOn the absorption of infrared radiation by electrons in semiconductor inversion layers
Allen, S. J., Tsui, D. C., & Vinter, B. (1976) · Solid State Communications · doi:10.1016/0038-1098(76)90541-x · Cited by 301
Density-functional calculation of sub-band structure in accumulation and inversion layers
Ando, T. (1976) · Physical Review B · doi:10.1103/physrevb.13.3468 · Cited by 269
Metadata
- Authors
- Stern, F.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1972-06-15
- Volume
- 5
- Issue
- 12
- Pages
- 4891-4899
- ISSN
- 0556-2805 (ISSN-L)
- OpenAlex
- W2094484501
- Cited by
- 1,176
- References
- 0
- FWCI
- 28.35
- Type
- journal article
- Language
- en
- Open access
- closed
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- Stern, F. (1972). Self-Consistent Results forn-Type Si Inversion Layers. Physical Review B. https://doi.org/10.1103/physrevb.5.4891
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
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