The DOI matches its Crossref record; 11 of the 11 references it cites were found in a registry or an index.
Theory ofGaN(101¯0)and (112¯0) surfaces
Abstract
The surface energies and atomic structures for two nonpolar surfaces of GaN have been calculated within the local-density approximation. For the ($10\overline{1}0$) surface, which has Ga-N dimers in the surface layer, the calculated surface energy is 118 meV/${\mathrm{\AA{}}}^{2}$, and for the ($11\overline{2}0$) surface, which has Ga-N chains in the topmost layer, the energy is 123 meV/${\mathrm{\AA{}}}^{2}$. The relaxation mechanisms on both surfaces are a Ga-N bond contraction and a \ensuremath{\sim}7\ifmmode^\circ\else\textdegree\fi{} buckling rehybridization in the surface layer. For the ($10\overline{1}0$) surface we find that under Ga-rich conditions a nonstoichiometric surface having Ga-Ga dimers is stable with respect to the ideal Ga-N dimer-terminated surface.
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Cites
Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
Efficient pseudopotentials for plane-wave calculations
Troullier, N., & Martins, J. L. (1991) · Physical Review B · doi:10.1103/physrevb.43.1993 · Cited by 16,148
Efficacious Form for Model Pseudopotentials
Kleinman, L., & Bylander, D. M. (1982) · Physical Review Letters · doi:10.1103/physrevlett.48.1425 · Cited by 5,672
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
Nakamura, S., Mukai, T., & Senoh, M. (1994) · Applied Physics Letters · doi:10.1063/1.111832 · Cited by 3,823
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Nonlinear ionic pseudopotentials in spin-density-functional calculations
Louie, S. G., Froyen, S., & Cohen, M. L. (1982) · Physical Review B · doi:10.1103/physrevb.26.1738 · Cited by 2,247
Metallurgical Thermochemistry.
Charles, J. A. (1980) · Chemical Engineering Science · doi:10.1016/0009-2509(80)85024-x · Cited by 1,571
High dislocation densities in high efficiency GaN-based light-emitting diodes
Lester, S. D., Ponce, F. A., Craford, M. G., & Steigerwald, D. A. (1995) · Applied Physics Letters · doi:10.1063/1.113252 · Cited by 966
Qian, G.-X., Martin, R. M., & Chadi, D. J. (1988) · Physical Review B · doi:10.1103/physrevb.38.7649 · Cited by 716
Stumpf, R., & Scheffler, M. (1994) · Computer Physics Communications · doi:10.1016/0010-4655(94)90187-2 · Cited by 255
Cited by
Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth Parameters
Joyce, H. J., Wong-Leung, J., Gao, Q., Tan, H. H., & Jagadish, C. (2010) · Nano Letters · doi:10.1021/nl903688v · Cited by 484
Metadata
- Authors
- Northrup, J. E., & Neugebauer, J.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1996-04-15
- Volume
- 53
- Issue
- 16
- Pages
- R10477-R10480
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2405954888
- Cited by
- 339
- References
- 11
- FWCI
- 12.51
- Type
- journal article
- Language
- en
- Open access
- closed
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