The DOI matches its Crossref record; 62 of the 62 references it cites were found in a registry or an index.
Fabrication and performance of GaN electronic devices
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
Nakamura, S., Mukai, T., & Senoh, M. (1994) · Applied Physics Letters · doi:10.1063/1.111832 · Cited by 3,823
Spontaneous polarization and piezoelectric constants of III-V nitrides
Bernardini, F., Fiorentini, V., & Vanderbilt, D. (1997) · Physical Review B · doi:10.1103/physrevb.56.r10024 · Cited by 3,126
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Amano, H., Sawaki, N., Akasaki, I., & Toyoda, Y. (1986) · Applied Physics Letters · doi:10.1063/1.96549 · Cited by 2,217
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
Amano, H., Kito, M., Hiramatsu, K., & Akasaki, I. (1989) · Japanese Journal of Applied Physics · doi:10.1143/jjap.28.l2112 · Cited by 2,002
GaN: Processing, defects, and devices
Pearton, S. J., Zolper, J. C., Shul, R. J., & Ren, F. (1999) · Journal of Applied Physics · doi:10.1063/1.371145 · Cited by 1,814
Self-citationGrowth and applications of Group III-nitrides
Ambacher, O. (1998) · Journal of Physics D: Applied Physics · doi:10.1088/0022-3727/31/20/001 · Cited by 1,474
THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
Maruska, H. P., & Tietjen, J. J. (1969) · Applied Physics Letters · doi:10.1063/1.1652845 · Cited by 1,350
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
Nakamura, S., Mukai, T., Masayuki Senoh, M. S., & Naruhito Iwasa, N. I. (1992) · Japanese Journal of Applied Physics · doi:10.1143/jjap.31.l139 · Cited by 1,141
Power semiconductor device figure of merit for high-frequency applications
Baliga, B. J. (1989) · IEEE Electron Device Letters · doi:10.1109/55.43098 · Cited by 1,070
Cited by
Substrates for gallium nitride epitaxy
Liu, L., & Edgar, J. H. (2002) · Materials Science and Engineering: R: Reports · doi:10.1016/s0927-796x(02)00008-6 · Cited by 833
Overcoming the doping bottleneck in semiconductors
Wei, S.-H. (2004) · Computational Materials Science · doi:10.1016/j.commatsci.2004.02.024 · Cited by 573
Metadata
- Authors
- Pearton, S. J., Ren, F., Zhang, A. P., & Lee, K. P.
- Venue
- Materials Science and Engineering: R: Reports
- Publisher
- Elsevier BV
- Published
- 2000-12
- Volume
- 30
- Issue
- 3-6
- Pages
- 55-212
- ISSN
- 0927-796X (ISSN-L)
- OpenAlex
- W1999452460
- Cited by
- 507
- References
- 62
- FWCI
- 24.03
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Fabrication and performance of GaN electronic devices. https://app.cochat.ai/papers/10.1016/s0927-796x(00)00028-0
- The paper
- Pearton, S. J., Ren, F., Zhang, A. P., & Lee, K. P. (2000). Fabrication and performance of GaN electronic devices. Materials Science and Engineering: R: Reports. https://doi.org/10.1016/s0927-796x(00)00028-0
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
