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Heteroepitaxial graphite on6H−SiC(0001): Interface formation through conduction-band electronic structure
Abstract
When annealed at elevated temperatures under vacuum, silicon carbide surfaces show a tendency towards graphitization. Using the sensitivity of empty conduction-band states dispersion towards the structural quality of the overlayer, we have used angular-resolved inverse photoemission spectroscopy (KRIPES) to monitor the progressive formation of crystalline graphite on $6H\ensuremath{-}\mathrm{SiC}(0001)$ surfaces. The KRIPES spectra obtained after annealing at 1400 \ifmmode^\circ\else\textdegree\fi{}C are characteristic of azimuthally oriented, graphite multilayers of very good single-crystalline quality. For lower annealing temperatures, the ordered interface already presents most of the fingerprints of graphite as soon as 1080 \ifmmode^\circ\else\textdegree\fi{}C. The observation of unshifted ${\ensuremath{\pi}}^{*}$ states, which reveals a very weak interaction with the substrate, is consistent with the growth of a van der Waals heteroepitaxial graphite lattice on top of silicon carbide, with a coincidence lattice of $(6\sqrt{3}\ifmmode\times\else\texttimes\fi{}6\sqrt{3})R30\ifmmode^\circ\else\textdegree\fi{}$ symmetry. The growth of the first graphene sheet proceeds on top of adatoms characteristic of the $(\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3})R30\ifmmode^\circ\else\textdegree\fi{}$ reconstruction. These adatoms reduce the chemical reactivity of the substrate. A strong feature located at 6.5 eV above the Fermi level is attributed to states derived from Si vacancies in the C-rich subsurface layers of the SiC substrate. This strongly perturbed substrate can be viewed as a diamondlike phase which acts as a precursor to graphite formation by collapse of several layers. In this framework, previously published soft x-ray photoemission spectra find a natural explanation.
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Citations
Cited by
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
“Upon heating, the sili on from the top layersdesorbs, and a few layers of graphene are left onthe surfa e (Berger et al., 2004; Bommel et al., 1975;Coey et al., 2002; Forbeaux et al., 1998; Hass et al.,2007a; de Heer et al., 2007; Rollings et al., 2005).”
BackgroundBerger, C., Song, Z., Li, T., Li, X., Ogbazghi, A. Y., Feng, R., Dai, Z., Marchenkov, A. N., Conrad, E. H., First, P. N., et al. (2004) · The Journal of Physical Chemistry B · doi:10.1021/jp040650f · Cited by 3,548
Controlling the Electronic Structure of Bilayer Graphene
Ohta, T., Bostwick, A., Seyller, T., Horn, K., & Rotenberg, E. (2006) · Science · doi:10.1126/science.1130681 · Cited by 3,339
Quasiparticle dynamics in graphene
Bostwick, A., Ohta, T., Seyller, T., Horn, K., & Rotenberg, E. (2007) · Nature Physics · doi:10.1038/nphys477 · Cited by 1,160
Structural Coherency of Graphene on Ir(111)
Coraux, J., N‘Diaye, A. T., Busse, C., & Michely, T. (2008) · Nano Letters · doi:10.1021/nl0728874 · Cited by 1,018
Emtsev, K. V., Speck, F., Seyller, T., Ley, L., & Riley, J. D. (2008) · Physical Review B · doi:10.1103/physrevb.77.155303 · Cited by 936
Electronic and Magnetic Properties of Quasifreestanding Graphene on Ni
Varykhalov, A., Sánchez-Barriga, J., Shikin, A. M., Biswas, C., Vescovo, E., Rybkin, A., Marchenko, D., & Rader, O. (2008) · Physical Review Letters · doi:10.1103/physrevlett.101.157601 · Cited by 666
Landau Level Spectroscopy of Ultrathin Graphite Layers
Sadowski, M. L., Martinez, G., Potemski, M., Berger, C., & de Heer, W. A. (2006) · Physical Review Letters · doi:10.1103/physrevlett.97.266405 · Cited by 593
Graphene-Based Materials for Biosensors: A Review
Suvarnaphaet, P., & Pechprasarn, S. (2017) · Sensors · doi:10.3390/s17102161 · Cited by 490
de Heer, W. A., Berger, C., Ruan, M., Sprinkle, M., Li, X., Hu, Y., Zhang, B., Hankinson, J., & Conrad, E. (2011) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1105113108 · Cited by 470
Synthesis and characterization of atomically thin graphite films on a silicon carbide substrate
Rollings, E., Gweon, G.-H., Zhou, S. Y., Mun, B. S., McChesney, J. L., Hussain, B. S., Fedorov, A. V., First, P. N., de Heer, W. A., & Lanzara, A. (2006) · Journal of Physics and Chemistry of Solids · doi:10.1016/j.jpcs.2006.05.010 · Cited by 447
Observation of Plasmarons in Quasi-Freestanding Doped Graphene
Bostwick, A., Speck, F., Seyller, T., Horn, K., Polini, M., Asgari, R., MacDonald, A. H., & Rotenberg, E. (2010) · Science · doi:10.1126/science.1186489 · Cited by 425
Lauffer, P., Emtsev, K. V., Graupner, R., Seyller, T., Ley, L., Reshanov, S. A., & Weber, H. B. (2008) · Physical Review B · doi:10.1103/physrevb.77.155426 · Cited by 386
Origin of Anomalous Electronic Structures of Epitaxial Graphene on Silicon Carbide
Kim, S., Ihm, J., Choi, H. J., & Son, Y.-W. (2008) · Physical Review Letters · doi:10.1103/physrevlett.100.176802 · Cited by 386
Metadata
- Authors
- Forbeaux, I., Themlin, J.-M., & Debever, J.-M.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1998-12-15
- Volume
- 58
- Issue
- 24
- Pages
- 16396-16406
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W1997613934
- Cited by
- 703
- References
- 0
- FWCI
- 1.21
- Type
- journal article
- Language
- en
- Open access
- closed
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