The DOI matches its Crossref record; 24 of the 24 references it cites were found in a registry or an index.
Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s
Abstract
The hole mobility of $p$-type strained Si metal-oxide-semiconductor field-effect transistors (MOSFET's) fabricated on a SiGe substrate is investigated theoretically and compared with the mobility of conventional (unstrained) Si $p$-MOSFET's. Two-dimensional quantization of the holes is taken into account in terms of a self-consistent six-band $\mathbf{k}\mathbf{\ensuremath{\cdot}}\mathbf{p}$ model for the strained band structure and the confined hole subband states in the inversion channel. The hole dynamics along the inversion channel is studied in terms of ensemble Monte Carlo calculations that take into account all relevant scattering mechanisms. For a Ge concentration of $30%$ in the substrate, we predict a mobility enhancement of a factor of 2.3 compared to the unstrained $p$-type device. The calculated low-field mobility is in excellent agreement with experimental data for strained ${\mathrm{S}\mathrm{i}/\mathrm{S}\mathrm{i}}_{0.8}{\mathrm{Ge}}_{0.2}$ and for unstrained Si $p$-MOSFET's.
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Citations
Cites
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Cited by
Si/SiGe heterostructures: from material and physics to devices and circuits
Paul, D. J. (2004) · Semiconductor Science and Technology · doi:10.1088/0268-1242/19/10/r02 · Cited by 559
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
Sun, Y., Thompson, S. E., & Nishida, T. (2007) · Journal of Applied Physics · doi:10.1063/1.2730561 · Cited by 521
Fischetti, M. V., Ren, Z., Solomon, P. M., Yang, M., & Rim, K. (2003) · Journal of Applied Physics · doi:10.1063/1.1585120 · Cited by 485
Metadata
- Authors
- Oberhuber, R., Zandler, G., & Vogl, P.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1998-10-15
- Volume
- 58
- Issue
- 15
- Pages
- 9941-9948
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2073720450
- Cited by
- 255
- References
- 24
- FWCI
- 9.73
- Type
- journal article
- Language
- en
- Open access
- closed
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- Oberhuber, R., Zandler, G., & Vogl, P. (1998). Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s. Physical Review B. https://doi.org/10.1103/physrevb.58.9941
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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