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Cited by 207

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Spin coherence and dephasing in GaN

Beschoten, B., Johnston-Halperin, E., Young, D. K., Poggio, M., Grimaldi, J. E., Keller, S., DenBaars, S. P., Mishra, U. K., Hu, E. L., Awschalom, D. D.·2001·Physical Review B

Abstract

Time-resolved Faraday rotation is used to measure electron spin coherence in n-type GaN epilayers. Despite densities of charged threading dislocations of $\ensuremath{\sim}5\ifmmode\times\else\texttimes\fi{}{10}^{8}{\mathrm{cm}}^{\mathrm{\ensuremath{-}}2},$ this coherence yields spin lifetimes of \ensuremath{\sim}20 ns at $T=5\mathrm{K},$ and persists to room temperature. Spin dephasing is investigated in the vicinity of the metal-insulator transition. The dependence on both magnetic field and temperature is found to be qualitatively similar to previous studies in n-type GaAs, suggesting a common origin for spin relaxation in these systems.

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Metadata

Authors
Beschoten, B., Johnston-Halperin, E., Young, D. K., Poggio, M., Grimaldi, J. E., Keller, S., DenBaars, S. P., Mishra, U. K., Hu, E. L., & Awschalom, D. D.
Venue
Physical Review B
Published
2001-03-13
Volume
63
Issue
12
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
OpenAlex
W2328641541
Cited by
207
References
2
FWCI
6.13
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Spin coherence and dephasing in GaN. https://app.cochat.ai/papers/10.1103/physrevb.63.121202
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Beschoten, B., Johnston-Halperin, E., Young, D. K., Poggio, M., Grimaldi, J. E., Keller, S., DenBaars, S. P., Mishra, U. K., Hu, E. L., & Awschalom, D. D. (2001). Spin coherence and dephasing in GaN. Physical Review B. https://doi.org/10.1103/physrevb.63.121202

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