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Cited by 388

The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.

Compensation mechanism for N acceptors in ZnO

Lee, Eun-Cheol, Kim, Y.-S., Jin, Y.-G., Chang, K. J.·2001·Physical Review B

Abstract

We present a mechanism for the compensation of N acceptors in ZnO through real-space multigrid electronic structure calculations within the local-density-functional approximation. We find that at low N doping levels using a normal ${\mathrm{N}}_{2}$ source, O vacancies are the main compensating donors for N acceptors, while N acceptors are compensated via the formation of defect complexes with Zn antisites at high doping levels. When an active plasma ${\mathrm{N}}_{2}$ gas is used to increase the N solubility, N acceptors are still greatly compensated by ${\mathrm{N}}_{2}$ molecules at oxygen sites and N-acceptor--${\mathrm{N}}_{2}$ complexes, explaining the difficulty in achieving low-resistivity p-type ZnO.

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Metadata

Authors
Lee, E.-C., Kim, Y.-S., Jin, Y.-G., & Chang, K. J.
Venue
Physical Review B
Published
2001-08-08
Volume
64
Issue
8
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
OpenAlex
W2064859831
Cited by
388
References
14
FWCI
5.39
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Compensation mechanism for N acceptors in ZnO. https://app.cochat.ai/papers/10.1103/physrevb.64.085120
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Lee, E.-C., Kim, Y.-S., Jin, Y.-G., & Chang, K. J. (2001). Compensation mechanism for N acceptors in ZnO. Physical Review B. https://doi.org/10.1103/physrevb.64.085120

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