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Cited by 578

The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.

Ab initio theory of gate induced gaps in graphene bilayers

Open access
Min, Hongki, Sahu, Bhagawan, Banerjee, Sanjay K., MacDonald, A. H.·2007·Physical Review B

Abstract

We study the gate-voltage induced gap that occurs in graphene bilayers using ab initio density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the ab initio calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.

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Metadata

Authors
Min, H., Sahu, B., Banerjee, S. K., & MacDonald, A. H.
Venue
Physical Review B
Published
2007-04-25
Volume
75
Issue
15
ISSN
  • 1098-0121 (ISSN-L)
  • 1550-235X
OpenAlex
W2018605312
Cited by
578
References
7
FWCI
22.12
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Ab initio theory of gate induced gaps in graphene bilayers. https://app.cochat.ai/papers/10.1103/physrevb.75.155115
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Min, H., Sahu, B., Banerjee, S. K., & MacDonald, A. H. (2007). Ab initio theory of gate induced gaps in graphene bilayers. Physical Review B. https://doi.org/10.1103/physrevb.75.155115

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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