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Electronic structure of silicon-based nanostructures
Open accessAbstract
We have developed a unifying tight-binding Hamiltonian that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the $s{p}^{3}{s}^{*}$ and $s{p}^{3}$ models up to first- and second-nearest neighbors, respectively. Our results show that the Si graphene-like sheets considered here are metals or zero-gap semiconductors, and that the corresponding Si nanotubes follow the so-called Hamada's [Phys. Rev. Lett. 68, 1579 (1992)] rule. Comparison to a recent ab initio calculation is made.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Electronic properties of disordered two-dimensional carbon
Peres, N. M. R., Guinea, F., & Castro Neto, A. H. (2006) · Physical Review B · doi:10.1103/physrevb.73.125411 · Cited by 1,445
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Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles
Li, X., Mullen, J. T., Jin, Z., Borysenko, K. M., Buongiorno Nardelli, M., & Kim, K. W. (2013) · Physical Review B · doi:10.1103/physrevb.87.115418 · Cited by 462
Gated silicene as a tunable source of nearly 100% spin-polarized electrons
Tsai, W.-F., Huang, C.-Y., Chang, T.-R., Lin, H., Jeng, H.-T., & Bansil, A. (2013) · Nature Communications · doi:10.1038/ncomms2525 · Cited by 451
Local Electronic Properties of Corrugated Silicene Phases
Chiappe, D., Grazianetti, C., Tallarida, G., Fanciulli, M., & Molle, A. (2012) · Advanced Materials · doi:10.1002/adma.201202100 · Cited by 304
Tunable and sizable band gap in silicene by surface adsorption
Quhe, R., Fei, R., Liu, Q., Zheng, J., Li, H., Xu, C., Ni, Z., Wang, Y., Yu, D., Gao, Z., et al. (2012) · Scientific Reports · doi:10.1038/srep00853 · Cited by 295
Metadata
- Authors
- Guzmán-Verri, G. G., & Lew Yan Voon, L. C.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2007-08-30
- Volume
- 76
- Issue
- 7
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2055489095
- Cited by
- 1,030
- References
- 2
- FWCI
- 2.93
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Guzmán-Verri, G. G., & Lew Yan Voon, L. C. (2007). Electronic structure of silicon-based nanostructures. Physical Review B. https://doi.org/10.1103/physrevb.76.075131
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