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Probing the electronic structure of bilayer graphene by Raman scattering
Open accessAbstract
The electronic structure of bilayer graphene is investigated from a resonant Raman study of the ${G}^{\ensuremath{'}}$ band using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for bilayer graphene are obtained from the analysis of the dispersive behavior of the Raman features, and reveal the difference of the effective masses of electrons and holes. The splitting of the two TO phonon branches in bilayer graphene is also obtained from the experimental data. Our results have implications for bilayer graphene electronic devices.
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Citations
Cites
Landau-Level Degeneracy and Quantum Hall Effect in a Graphite Bilayer
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The electronic properties of graphene
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“Adapted from Malard et al., 2007.graphene layers.”
Raman spectroscopy as a versatile tool for studying the properties of graphene
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Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene
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Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition
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Phonon renormalization in doped bilayer graphene
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Metadata
- Authors
- Malard, L. M., Nilsson, J., Elias, D. C., Brant, J. C., Plentz, F., Alves, E. S., Castro Neto, A. H., & Pimenta, M. A.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2007-11-01
- Volume
- 76
- Issue
- 20
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W1988992630
- Cited by
- 339
- References
- 2
- FWCI
- 14.08
- Type
- journal article
- Language
- en
- Open access
- green
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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