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Cited by 362

The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.

Microscopic thickness determination of thin graphite films formed onSiCfrom quantized oscillation in reflectivity of low-energy electrons

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Hibino, H., Kageshima, H., Maeda, F., Nagase, M., Kobayashi, Y., Yamaguchi, H.·2008·Physical Review B

Abstract

Low-energy electron microscopy (LEEM) was used to measure the reflectivity of low-energy electrons from graphitized $\mathrm{SiC}(0001)$. The reflectivity shows distinct quantized oscillations as a function of the electron energy and graphite thickness. Conduction bands in thin graphite films form discrete energy levels whose wave vectors are normal to the surface. Resonance of the incident electrons with these quantized conduction band states enhances electrons to transmit through the film into the $\mathrm{SiC}$ substrate, resulting in dips in the reflectivity. The dip positions are well explained using tight-binding and first-principles calculations. The graphite thickness distribution can be determined microscopically from LEEM reflectivity measurements.

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Crossref · 10.1103/physrevb.77.075413

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Metadata

Authors
Hibino, H., Kageshima, H., Maeda, F., Nagase, M., Kobayashi, Y., & Yamaguchi, H.
Venue
Physical Review B
Published
2008-02-15
Volume
77
Issue
7
ISSN
  • 1098-0121 (ISSN-L)
  • 1550-235X
OpenAlex
W2031391367
Cited by
362
References
3
FWCI
18.56
Type
journal article
Language
en
Open access
green

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Hibino, H., Kageshima, H., Maeda, F., Nagase, M., Kobayashi, Y., & Yamaguchi, H. (2008). Microscopic thickness determination of thin graphite films formed onSiCfrom quantized oscillation in reflectivity of low-energy electrons. Physical Review B. https://doi.org/10.1103/physrevb.77.075413

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