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Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene
Open accessAbstract
We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e., gated or doped with a tunable and finite carrier density) two-dimensional graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find a temperature-dependent phonon-limited resistivity ${\ensuremath{\rho}}_{\mathit{ph}}(T)$ to be linear in temperature for $T\ensuremath{\gtrsim}50\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ with the room-temperature intrinsic mobility reaching the values of above ${10}^{5}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{2}∕\mathrm{V}\phantom{\rule{0.2em}{0ex}}\mathrm{s}$. We comment on the low-temperature Bloch--Gr\"uneisen behavior where ${\ensuremath{\rho}}_{\mathit{ph}}(T)\ensuremath{\sim}{T}^{4}$ for unscreened electron-phonon coupling.
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Metadata
- Authors
- Hwang, E. H., & Das Sarma, S.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2008-03-27
- Volume
- 77
- Issue
- 11
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W1606101578
- Cited by
- 870
- References
- 26
- FWCI
- 16.34
- Type
- journal article
- Language
- en
- Open access
- green
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