The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Valley-dependent optoelectronics from inversion symmetry breaking
Open accessAbstract
Inversion symmetry breaking allows contrasted circular dichroism in different $k$-space regions, which takes the extreme form of optical selection rules for interband transitions at high symmetry points. In materials where band edges occur at noncentral valleys, this enables valley-dependent interplay of electrons with light of different circular polarizations, in analogy to spin dependent optical activities in semiconductors. This discovery is in perfect harmony with the previous finding of valley contrasted Bloch band features of orbital magnetic moment and Berry curvatures from inversion symmetry breaking [D. Xiao, W. Yao, and Q. Niu, Phys. Rev. Lett. 99, 236809 (2007)]. A universal connection is revealed between the $k$-resolved optical oscillator strength of interband transitions, the orbital magnetic moment and the Berry curvatures, which also provides a principle for optical measurement of orbital magnetization and intrinsic anomalous Hall conductivity in ferromagnetic systems. The general physics is demonstrated in graphene where inversion symmetry breaking leads to valley contrasted optical selection rule for interband transitions. We discuss graphene based valley optoelectronics applications where light polarization information can be interconverted with electronic information.
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Cites
Electric Field Effect in Atomically Thin Carbon Films
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Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Experimental observation of the quantum Hall effect and Berry's phase in graphene
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Thouless, D. J., Kohmoto, M., Nightingale, M. P., & den Nijs, M. (1982) · Physical Review Letters · doi:10.1103/physrevlett.49.405 · Cited by 6,973
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McCann, E., & Fal’ko, V. I. (2006) · Physical Review Letters · doi:10.1103/physrevlett.96.086805 · Cited by 2,060
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
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Cited by
Berry phase effects on electronic properties
Xiao, D., Chang, M.-C., & Niu, Q. (2010) · Reviews of Modern Physics · doi:10.1103/revmodphys.82.1959 · Cited by 5,277
Self-citationSpin and pseudospins in layered transition metal dichalcogenides
Xu, X., Yao, W., Xiao, D., & Heinz, T. F. (2014) · Nature Physics · doi:10.1038/nphys2942 · Cited by 2,855
Self-citationSchaibley, J. R., Yu, H., Clark, G., Rivera, P., Ross, J. S., Seyler, K. L., Yao, W., & Xu, X. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.55 · Cited by 2,652
Self-citationThe valley Hall effect in MoS 2 transistors
Mak, K. F., McGill, K. L., Park, J., & McEuen, P. L. (2014) · Science · doi:10.1126/science.1250140 · Cited by 1,915
All-Si valley-Hall photonic topological insulator
Ma, T., & Shvets, G. (2016) · New Journal of Physics · doi:10.1088/1367-2630/18/2/025012 · Cited by 747
Metadata
- Authors
- Yao, W., Xiao, D., & Niu, Q.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2008-06-04
- Volume
- 77
- Issue
- 23
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W1975993229
- Cited by
- 1,152
- References
- 7
- FWCI
- 4.45
- Type
- journal article
- Language
- en
- Open access
- green
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