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Tunable band gaps in bilayer transition-metal dichalcogenides
Abstract
We investigate band-gap tuning in bilayer transition-metal dichalcogenides by external electric fields applied perpendicular to the layers. Using density functional theory, we show that the fundamental band gap of MoS${}_{2}$, MoSe${}_{2}$, MoTe${}_{2}$, and WS${}_{2}$ bilayer structures continuously decreases with increasing applied electric fields, eventually rendering them metallic. We interpret our results in the light of the giant Stark effect and obtain a robust relationship, which is essentially characterized by the interlayer spacing, for the rate of change of band gap with applied external field. Our study expands the known space of layered materials with widely tunable band gaps beyond the classic example of bilayer graphene and suggests potential directions for fabrication of novel electronic and photonic devices.
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Cited by
Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
Wang, X., Wang, P., Wang, J., Hu, W., Zhou, X., Guo, N., Huang, H., Sun, S., Shen, H., Lin, T., et al. (2015) · Advanced Materials · doi:10.1002/adma.201503340 · Cited by 853
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Phosphorene Nanoribbons, Phosphorus Nanotubes, and van der Waals Multilayers
Guo, H., Lu, N., Dai, J., Wu, X., & Zeng, X. C. (2014) · The Journal of Physical Chemistry C · doi:10.1021/jp505257g · Cited by 615
Qiu, H., Pan, L., Yao, Z., Li, J., Shi, Y., & Wang, X. (2012) · Applied Physics Letters · doi:10.1063/1.3696045 · Cited by 586
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Metadata
- Authors
- Ramasubramaniam, A., Naveh, D., & Towe, E.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2011-11-18
- Volume
- 84
- Issue
- 20
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2318274398
- Cited by
- 658
- References
- 40
- FWCI
- 14.25
- Type
- journal article
- Language
- en
- Open access
- closed
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- Ramasubramaniam, A., Naveh, D., & Towe, E. (2011). Tunable band gaps in bilayer transition-metal dichalcogenides. Physical Review B. https://doi.org/10.1103/physrevb.84.205325
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