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Symmetry-dependent phonon renormalization in monolayer MoS2transistor
Open accessAbstract
A strong electron-phonon interaction which limits the electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of doping in graphene-based devices. Using in situ Raman scattering from a single-layer MoS${}_{2}$ electrochemically top-gated field-effect transistor (FET), we show softening and broadening of the ${A}_{1g}$ phonon with electron doping, whereas the other Raman-active ${E}_{2g}^{1}$ mode remains essentially inert. Confirming these results with first-principles density functional theory based calculations, we use group theoretical arguments to explain why the ${A}_{1g}$ mode specifically exhibits a strong sensitivity to electron doping. Our work opens up the use of Raman spectroscopy in probing the level of doping in single-layer MoS${}_{2}$-based FETs, which have a high on-off ratio and are of technological significance.
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Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
Lloyd, D., Liu, X., Christopher, J. W., Cantley, L., Wadehra, A., Kim, B. L., Goldberg, B. B., Swan, A. K., & Bunch, J. S. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b02615 · Cited by 624
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
Azcatl, A., Qin, X., Prakash, A., Zhang, C., Cheng, L., Wang, Q., Lu, N., Kim, M. J., Kim, J., Cho, K., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b01853 · Cited by 491
Shi, J., Ma, D., Han, G.-F., Zhang, Y., Ji, Q., Gao, T., Sun, J., Song, X., Li, C., Zhang, Y., et al. (2014) · ACS Nano · doi:10.1021/nn503211t · Cited by 459
All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures
Wang, S., Wang, X., & Warner, J. H. (2015) · ACS Nano · doi:10.1021/acsnano.5b00655 · Cited by 389
Metadata
- Authors
- Chakraborty, B., Bera, A., Muthu, D. V. S., Bhowmick, S., Waghmare, U. V., & Sood, A. K.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2012-04-06
- Volume
- 85
- Issue
- 16
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2066978116
- Cited by
- 1,140
- References
- 2
- FWCI
- 19.84
- Type
- journal article
- Language
- en
- Open access
- green
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- Chakraborty, B., Bera, A., Muthu, D. V. S., Bhowmick, S., Waghmare, U. V., & Sood, A. K. (2012). Symmetry-dependent phonon renormalization in monolayer MoS2transistor. Physical Review B. https://doi.org/10.1103/physrevb.85.161403
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