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Electronic properties of the MoS2-WS2heterojunction
Open accessAbstract
We study the electronic structure of a heterojunction made of two monolayers of MoS${}_{2}$ and WS${}_{2}$. Our first-principles density functional calculations show that, unlike in the homogeneous bilayers, the heterojunction has an optically active band gap, smaller than the ones of MoS${}_{2}$ and WS${}_{2}$ single layers. We find that the optically active states of the maximum valence and minimum conduction bands are localized on opposite monolayers, and thus the lowest energy electron-holes pairs are spatially separated. Our findings portray the MoS${}_{2}$-WS${}_{2}$ bilayer as a prototypical example for band-gap engineering of atomically thin two-dimensional semiconducting heterostructures.
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Metadata
- Authors
- Kośmider, K., & Fernández-Rossier, J.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2013-02-28
- Volume
- 87
- Issue
- 7
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W1489985147
- Cited by
- 489
- References
- 48
- FWCI
- 26.79
- Type
- journal article
- Language
- en
- Open access
- bronze
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