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Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
Abstract
Carbon is a common impurity in the group-III nitrides, often unintentionally incorporated during growth. Nevertheless, the properties of carbon impurities in the nitrides are still not fully understood. We investigate the impact of carbon impurities on the electrical and optical properties of GaN, AlN, and InN using density functional calculations based on a hybrid functional. We examine the stability of substitutional and interstitial configurations as a function of the Fermi-level position and chemical potentials. In all nitrides studied here, C${}_{\mathrm{N}}$ acts as a deep acceptor and gives rise to deep, broad photoluminescence bands. Carbon on the cation site acts as a shallow donor in InN and GaN, but behaves as a $DX$ center in AlN. A split interstitial is the most stable configuration for the C impurity in InN, where it acts as a double donor and likely contributes to $n$-type conductivity.
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Projector augmented-wave method
Blöchl, P. E. (1994) · Physical Review B · doi:10.1103/physrevb.50.17953 · Cited by 92,732
From ultrasoft pseudopotentials to the projector augmented-wave method
Kresse, G., & Joubert, D. (1999) · Physical Review B · doi:10.1103/physrevb.59.1758 · Cited by 85,307
Self-Consistent Equations Including Exchange and Correlation Effects
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The 2018 GaN power electronics roadmap
Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., Charles, M., Chen, K. J., Chowdhury, N., Chu, R., et al. (2018) · Journal of Physics D: Applied Physics · doi:10.1088/1361-6463/aaaf9d · Cited by 1,313
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Computationally predicted energies and properties of defects in GaN
Lyons, J. L., & Van de Walle, C. G. (2017) · npj Computational Materials · doi:10.1038/s41524-017-0014-2 · Cited by 312
Self-citationA review on the GaN-on-Si power electronic devices
Zhong, Y., Zhang, J., Wu, S., Jia, L., Yang, X., Liu, Y., Zhang, Y., & Sun, Q. (2022) · Fundamental Research · doi:10.1016/j.fmre.2021.11.028 · Cited by 216
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs
Fabris, E., Meneghini, M., De Santi, C., Borga, M., Kinoshita, Y., Tanaka, K., Ishida, H., Ueda, T., Meneghesso, G., & Zanoni, E. (2019) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2018.2877905 · Cited by 29
Metadata
- Authors
- Lyons, J. L., Janotti, A., & Van de Walle, C. G.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2014-01-16
- Volume
- 89
- Issue
- 3
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2335100009
- Cited by
- 460
- References
- 3
- FWCI
- 20.60
- Type
- journal article
- Language
- en
- Open access
- closed
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