The DOI matches its Crossref record; 77 of the 77 references it cites were found in a registry or an index.
The 2018 GaN power electronics roadmap
Open accessAbstract
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.
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Cites
GaN-on-Si Power Technology: Devices and Applications
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Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures
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Self-citationGaN Power Transistors on Si Substrates for Switching Applications
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Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
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2013 IEEE Energy Conversion Congress and Exposition
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Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Self-citationStability, Reliability, and Robustness of GaN Power Devices: A Review
Kozak, J. P., Zhang, R., Porter, M., Song, Q., Liu, J., Wang, B., Wang, R., Saito, W., & Zhang, Y. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3266365 · Cited by 441
Self-citationHoo Teo, K., Zhang, Y., Chowdhury, N., Rakheja, S., Ma, R., Xie, Q., Yagyu, E., Yamanaka, K., Li, K., & Palacios, T. (2021) · Journal of Applied Physics · doi:10.1063/5.0061555 · Cited by 322
Self-citationDiscussion on Electric Power Supply Systems for All Electric Aircraft
Schefer, H., Fauth, L., Kopp, T. H., Mallwitz, R., Friebe, J., & Kurrat, M. (2020) · IEEE Access · doi:10.1109/access.2020.2991804 · Cited by 217
Thermal conductivity of GaN, GaN71 , and SiC from 150 K to 850 K
Zheng, Q., Li, C., Rai, A., Leach, J. H., Broido, D. A., & Cahill, D. G. (2019) · Physical Review Materials · doi:10.1103/physrevmaterials.3.014601 · Cited by 177
Metadata
- Authors
- Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., Charles, M., Chen, K. J., Chowdhury, N., Chu, R., De Santi, C., De Souza, M. M., Decoutere, S., Di Cioccio, L., Eckardt, B., Egawa, T., Fay, P., Freedsman, J. J., Guido, L., Häberlen, O., Haynes, G., Heckel, T., Hemakumara, D., Houston, P., Hu, J., Hua, M., Huang, Q., Huang, A., Jiang, S., Kawai, H., Kinzer, D., Kuball, M., Kumar, A., Lee, K. B., Li, X., Marcon, D., März, M., McCarthy, R., Meneghesso, G., Meneghini, M., Morvan, E., Nakajima, A., Narayanan, E. M. S., Oliver, S., Palacios, T., Piedra, D., Plissonnier, M., Reddy, R., Sun, M., Thayne, I., Torres, A., Trivellin, N., Unni, V, Uren, M. J., Van Hove, M., Wallis, D. J., Wang, J., Xie, J., Yagi, S., Yang, S., Youtsey, C., Yu, R., Zanoni, E., Zeltner, S., & Zhang, Y.
- Venue
- Journal of Physics D: Applied Physics
- Publisher
- IOP Publishing
- Published
- 2018-03-26
- Volume
- 51
- Issue
- 16
- Pages
- 163001
- ISSN
- 0022-3727 (ISSN-L)
- 1361-6463
- OpenAlex
- W2788013722
- Cited by
- 1,313
- References
- 77
- FWCI
- 70.36
- Type
- journal article
- Language
- en
- Open access
- hybrid
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- Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., Charles, M., Chen, K. J., Chowdhury, N., Chu, R., De Santi, C., De Souza, M. M., Decoutere, S., Di Cioccio, L., Eckardt, B., Egawa, T., Fay, P., Freedsman, J. J., Guido, L., . . . Zhang, Y. (2018). The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics. https://doi.org/10.1088/1361-6463/aaaf9d
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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