The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Metal to Insulator Transition in Epitaxial Graphene Induced by Molecular Doping
Open accessAbstract
The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator, is one of the key challenges of modern electronics. By employing angle-resolved photoemission spectroscopy we find that a reversible metal to insulator transition and a fine-tuning of the charge carriers from electrons to holes can be achieved in epitaxial bilayer and single layer graphene by molecular doping. The effects of electron screening and disorder are also discussed. These results demonstrate that epitaxial graphene is suitable for electronics applications, as well as provide new opportunities for studying the hole doping regime of the Dirac cone in graphene.
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Citations
Cites
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Berger, C., Song, Z., Li, T., Li, X., Ogbazghi, A. Y., Feng, R., Dai, Z., Marchenkov, A. N., Conrad, E. H., First, P. N., et al. (2004) · The Journal of Physical Chemistry B · doi:10.1021/jp040650f · Cited by 3,548
Landau-Level Degeneracy and Quantum Hall Effect in a Graphite Bilayer
McCann, E., & Fal’ko, V. I. (2006) · Physical Review Letters · doi:10.1103/physrevlett.96.086805 · Cited by 2,060
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033
Cited by
A tunable topological insulator in the spin helical Dirac transport regime
Hsieh, D., Xia, Y., Qian, D., Wray, L., Dil, J. H., Meier, F., Osterwalder, J., Patthey, L., Checkelsky, J. G., Ong, N. P., et al. (2009) · Nature · doi:10.1038/nature08234 · Cited by 1,979
Self-citationGraphene as Transparent Electrode Material for Organic Electronics
Pang, S., Hernandez, Y., Feng, X., & Müllen, K. (2011) · Advanced Materials · doi:10.1002/adma.201100304 · Cited by 788
Ryder, C. R., Wood, J. D., Wells, S. A., & Hersam, M. C. (2016) · ACS Nano · doi:10.1021/acsnano.6b01091 · Cited by 283
Metadata
- Authors
- Zhou, S. Y., Siegel, D. A., Fedorov, A. V., & Lanzara, A.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2008-08-20
- Volume
- 101
- Issue
- 8
- Pages
- 086402-086402
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2057712887
- Cited by
- 280
- References
- 4
- FWCI
- 14.31
- Type
- journal article
- Language
- en
- Open access
- green
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- Zhou, S. Y., Siegel, D. A., Fedorov, A. V., & Lanzara, A. (2008). Metal to Insulator Transition in Epitaxial Graphene Induced by Molecular Doping. Physical Review Letters. https://doi.org/10.1103/physrevlett.101.086402
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