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The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.

Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy

Open access
Mak, Kin Fai, Lui, Chun Hung, Shan, Jie, Heinz, Tony F.·2009·Physical Review Letters

Abstract

It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte top gate for a photon energy range of 0.2-0.7 eV. We see the emergence of new transitions as a band gap opens. A band gap approaching 200 meV is observed when an electric field approximately 1 V/nm is applied, inducing a carrier density of about 10(13) cm(-2)}. The magnitude of the band gap and the features observed in the infrared conductivity spectra are broadly compatible with calculations within a tight-binding model.

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Crossref · 10.1103/physrevlett.102.256405

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Metadata

Authors
Mak, K. F., Lui, C. H., Shan, J., & Heinz, T. F.
Venue
Physical Review Letters
Published
2009-06-26
Volume
102
Issue
25
Pages
256405-256405
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2038519285
Cited by
638
References
7
FWCI
24.88
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy. https://app.cochat.ai/papers/10.1103/physrevlett.102.256405
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Mak, K. F., Lui, C. H., Shan, J., & Heinz, T. F. (2009). Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy. Physical Review Letters. https://doi.org/10.1103/physrevlett.102.256405

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