The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Electronic Structure of Few-Layer Graphene: Experimental Demonstration of Strong Dependence on Stacking Sequence
Open accessAbstract
The electronic structure of few-layer graphene (FLG) samples with crystalline order was investigated experimentally by infrared absorption spectroscopy for photon energies ranging from 0.2-1 eV. Distinct optical conductivity spectra were observed for different samples having precisely the same number of layers. The different spectra arise from the existence of two stable polytypes of FLG, namely, Bernal (AB) stacking and rhombohedral (ABC) stacking. The observed absorption features, reflecting the underlying symmetry of the two polytypes and the nature of the associated van Hone singularities, were reproduced by explicit calculations within a tight-binding model. The findings demonstrate the pronounced effect of stacking order on the electronic structure of FLG.
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Cites
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Graphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Fine Structure Constant Defines Visual Transparency of Graphene
Nair, R. R., Blake, P., Grigorenko, A. N., Novoselov, K. S., Booth, T. J., Stauber, T., Peres, N. M. R., & Geim, A. K. (2008) · Science · doi:10.1126/science.1156965 · Cited by 9,084
Landau-Level Degeneracy and Quantum Hall Effect in a Graphite Bilayer
McCann, E., & Fal’ko, V. I. (2006) · Physical Review Letters · doi:10.1103/physrevlett.96.086805 · Cited by 2,060
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033
Asymmetry gap in the electronic band structure of bilayer graphene
McCann, E. (2006) · Physical Review B · doi:10.1103/physrevb.74.161403 · Cited by 1,275
Cited by
Graphene synthesis: relationship to applications
Edwards, R. S., & Coleman, K. S. (2013) · Nanoscale · doi:10.1039/c2nr32629a · Cited by 773
Stacking-dependent band gap and quantum transport in trilayer graphene
Bao, W., Jing, L., Velasco, J., Lee, Y., Liu, G., Tran, D., Standley, B., Aykol, M., Cronin, S. B., Smirnov, D., et al. (2011) · Nature Physics · doi:10.1038/nphys2103 · Cited by 503
Metadata
- Authors
- Mak, K. F., Shan, J., & Heinz, T. F.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2010-04-29
- Volume
- 104
- Issue
- 17
- Pages
- 176404-176404
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2014406419
- Cited by
- 315
- References
- 7
- FWCI
- 13.44
- Type
- journal article
- Language
- en
- Open access
- green
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