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Electron and Optical Phonon Temperatures in Electrically Biased Graphene
Open accessAbstract
We examine the intrinsic energy dissipation steps in electrically biased graphene channels. By combining in-situ measurements of the spontaneous optical emission with a Raman spectroscopy study of the graphene sample under conditions of current flow, we obtain independent information on the energy distribution of the electrons and phonons. The electrons and holes contributing to light emission are found to obey a thermal distribution, with temperatures in excess of 1500 K in the regime of current saturation. The zone-center optical phonons are also highly excited and are found to be in equilibrium with the electrons. For a given optical phonon temperature, the anharmonic downshift of the Raman G mode is smaller than expected under equilibrium conditions, suggesting that the electrons and high-energy optical phonons are not fully equilibrated with all of the phonon modes.
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Cites
Fine Structure Constant Defines Visual Transparency of Graphene
Nair, R. R., Blake, P., Grigorenko, A. N., Novoselov, K. S., Booth, T. J., Stauber, T., Peres, N. M. R., & Geim, A. K. (2008) · Science · doi:10.1126/science.1156965 · Cited by 9,084
Cited by
Light–matter interaction in a microcavity-controlled graphene transistor
Engel, M., Steiner, M., Lombardo, A., Ferrari, A. C., Löhneysen, H. V., Avouris, P., & Krupke, R. (2012) · Nature Communications · doi:10.1038/ncomms1911 · Cited by 401
Doping Dependence of the Raman Spectrum of Defected Graphene
Bruna, M., Ott, A. K., Ijäs, M., Yoon, D., Sassi, U., & Ferrari, A. C. (2014) · ACS Nano · doi:10.1021/nn502676g · Cited by 391
Efficient plasmonic emission by the quantum Čerenkov effect from hot carriers in graphene
Kaminer, I., Katan, Y. T., Buljan, H., Shen, Y., Ilic, O., López, J. J., Wong, L. J., Joannopoulos, J. D., & Soljačić, M. (2016) · Nature Communications · doi:10.1038/ncomms11880 · Cited by 365
Vallabhaneni, A. K., Singh, D., Bao, H., Murthy, J., & Ruan, X. (2016) · Physical Review B · doi:10.1103/physrevb.93.125432 · Cited by 134
Metadata
- Authors
- Berciaud, S., Han, M. Y., Mak, K. F., Brus, L. E., Kim, P., & Heinz, T. F.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2010-06-03
- Volume
- 104
- Issue
- 22
- Pages
- 227401-227401
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2031688739
- Cited by
- 218
- References
- 1
- FWCI
- 6.80
- Type
- journal article
- Language
- en
- Open access
- green
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- Berciaud, S., Han, M. Y., Mak, K. F., Brus, L. E., Kim, P., & Heinz, T. F. (2010). Electron and Optical Phonon Temperatures in Electrically Biased Graphene. Physical Review Letters. https://doi.org/10.1103/physrevlett.104.227401
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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