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Band Structure of SnTe Studied by Photoemission Spectroscopy
Open accessAbstract
We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p bands. Our study reveals the conjectured complex Fermi surface structure near the L points showing topological changes in the bands from disconnected pockets, to open tubes, and then to cuboids as the binding energy increases, resolving lingering issues about the electronic structure. The chemical potential at the crystal surface is found to be 0.5 eV below the gap, corresponding to a carrier density of p=1.14 × 10(21) cm(-3) or 7.2 × 10(-2) holes per unit cell. At a temperature below the cubic-rhombohedral structural transition a small shift in spectral energy of the valance band is found, in agreement with model predictions.
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“The surface states, which may exist within the band gap, are thus unoccupied and cannot be experimentally studied by photoemission experiments 18 .”
From Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe (2012) · cites this paper as [18]
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Cites
Generalized Gradient Approximation Made Simple
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Cochran, W., Cowley, R. A., Dolling, G., & Elcombe, M. M. (1966) · Proceedings of the Royal Society of London A Mathematical and Physical Sciences · doi:10.1098/rspa.1966.0182 · Cited by 221
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Self-citationSnTe Nanocrystals: A New Example of Narrow-Gap Semiconductor Quantum Dots
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Iizumi, M., Hamaguchi, Y., F. Komatsubara, K., & Kato, Y. (1975) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.38.443 · Cited by 165
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Littlewood, P. B. (1980) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/13/26/010 · Cited by 71
Self-citationWeak-Field Magnetoresistance and the Valence-Band Structure of SnTe
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Burke, J. R., Allgaier, R. S., Houston, B. B., Babiskin, J., & Siebenmann, P. G. (1965) · Physical Review Letters · doi:10.1103/physrevlett.14.360 · Cited by 62
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Items 101–106 of 106
Microscopic insights to the ultralow thermal conductivity of monolayer 1T-SnTe2
Aziz, K., Ekpe, J. E., Okekeoma, A. O., Ebuwa, S. O., Mbam, S. M., Ani, S., Asogwa, M. N., Mangluhut, R. A., Iloanya, A. C., Ezema, F. I., et al. (2026) · Scientific Reports · doi:10.1038/s41598-025-33994-5
Behera, A., & Kumar, V. N. (2026) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2026.189098
Electronic transport in SnTe based topological crystalline insulators
Witmans, F. J., Kamphuis, M. J. G., Zwanenburg, F. A., Brinkman, A., & Ridderbos, J. (2026) · Materials for Quantum Technology · doi:10.1088/2633-4356/ae9683
Dual character of Zn impurity in SnTe: Tuning thermoelectric and topological properties
Anonymous, & Wiendlocha, B. (2026) · Physical review. B./Physical review. B · doi:10.1103/sy2c-ggdb
Metadata
- Authors
- Littlewood, P. B., Mihaila, B., Schulze, R. K., Safarik, D. J., Gubernatis, J. E., Bostwick, A., Rotenberg, E., Opeil, C. P., Durakiewicz, T., Smith, J. L., & Lashley, J. C.
- Affiliations
- University of Cambridge (GB)
- Los Alamos National Laboratory (US)
- Lawrence Berkeley National Laboratory (US)
- Boston College (US)
- ORCID
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2010-08-20
- Volume
- 105
- Issue
- 8
- Pages
- 086404-086404
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2031045756
- Cited by
- 106
- References
- 12
- Citations by year
- 2026: 4 · 2025: 4 · 2024: 2 · 2023: 5 · 2022: 2 · 2021: 10 · 2020: 4 · 2019: 12 · 2018: 12 · 2017: 8 · 2016: 6 · 2015: 6 · 2014: 12 · 2013: 11 · 2012: 5
- FWCI
- 3.25
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Locations
- Physical Review Letters (publishedVersion)
- PubMed (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- arXiv (Cornell University)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Topological Materials and Phenomena
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Keywords
- SnTe, electronic band structure, Fermi surface, L point, P-band, tight-binding model, chemical potential, carrier concentration, valence band, angle-resolved photoemission
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