Phase Transition in SnTe with Low Carrier Concentration
Abstract
The phase transition in SnTe was investigated on a single crystal with low carrier concentration (0.88×10 20 cm -3 ) by the neutron diffraction method. A second-order phase transition takes place at 98 K. Comparison of this considerably high transition temperature with previous data has revealed that the phase transition is strongly dependent on the carrier concentration and that the above temperature may be taken as an almost carrier-free limit. Possible origins of this dependence are speculated. Temperature change of the relative displacement of two sublattices in the rhombohedral phase was derived. At 25 K the single atom-position parameter deviates by 0.0040 from the value, 0.25, in the cubic phase. In the pseudobinary Pb 1- x Sn x Te system no evidence of phase transition was found for tin content x up to 0.35 at temperatures higher than 5 K even with low carrier concentration samples.
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Pb-rich samples have the ideal averaged sodium chloride structure without global rhombohedral distortion, preserving the crystal symmetry required for the predicted topological crystalline insulator phase.
“On the other hand, the Pb-rich samples are reported to possess the ideal (averaged) sodium chloride structure without global rhombohedral distortion 16 , which thus preserve the proper crystal symmetry required for the predicted TCI phase 15 .”
From Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe (2012) · cites this paper as [16]
SnTe crystals undergo a rhombohedral distortion that breaks crystal mirror symmetries and excludes a gapless topological crystalline insulator phase.
“However, it is experimentally known that SnTe crystals actually are subjected to a rhombohedral distortion 16 , which, strictly speaking, breaks the crystal mirror symmetries and hence excludes a gapless TCI phase 15 .”
From Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe (2012) · cites this paper as [16]
Rhombohedral distortion in SnTe occurs only in Sn-rich compositions (x>0.5) and only at low temperature.
“(the rhombohedral distortion is found to only occur in the Sn-rich compositions (x40.5) and only at low temperature 16 ).”
From Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe (2012) · cites this paper as [16]
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- Authors
- Iizumi, M., Hamaguchi, Y., F. Komatsubara, K., & Kato, Y.
- Affiliations
- Japan Atomic Energy Agency (JP)
- Central Research Laboratory, Hitachi Ltd.
- Venue
- Journal of the Physical Society of Japan
- Publisher
- Physical Society of Japan
- Published
- 1975-02
- Volume
- 38
- Issue
- 2
- Pages
- 443-449
- ISSN
- 0031-9015 (ISSN-L)
- 1347-4073
- OpenAlex
- W1968783898
- Cited by
- 165
- References
- 16
- Citations by year
- 2026: 8 · 2025: 5 · 2024: 4 · 2023: 5 · 2022: 5 · 2021: 5 · 2020: 8 · 2019: 7 · 2018: 8 · 2017: 5 · 2016: 4 · 2015: 1 · 2014: 5 · 2013: 4 · 2012: 3
- FWCI
- 15.33
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of the Physical Society of Japan (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Solid-state spectroscopy and crystallography
- Physical Sciences › Materials Science › Materials Chemistry › Thermal Expansion and Ionic Conductivity
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Keywords
- SnTe, phase transitions, low carrier density, second-order phase transition, transition temperature, carrier density dependence, rhombohedral phase, cubic phase, single crystals, lead tin telluride, pseudobinary system
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