Cited by 106Topological Materials and Phenomena2D Materials and ApplicationsAdvanced Semiconductor Detectors and Materials

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Band Structure of SnTe Studied by Photoemission Spectroscopy

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Littlewood, P. B., Mihaila, B., Schulze, R. K., Safarik, D. J., Gubernatis, J. E., Bostwick, A., Rotenberg, E., Opeil, C. P., Durakiewicz, T., Smith, J. L., Lashley, J. C.·2010·Physical Review Letters

DOI 10.1103/physrevlett.105.086404

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Abstract

We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p bands. Our study reveals the conjectured complex Fermi surface structure near the L points showing topological changes in the bands from disconnected pockets, to open tubes, and then to cuboids as the binding energy increases, resolving lingering issues about the electronic structure. The chemical potential at the crystal surface is found to be 0.5 eV below the gap, corresponding to a carrier density of p=1.14 × 10(21) cm(-3) or 7.2 × 10(-2) holes per unit cell. At a temperature below the cubic-rhombohedral structural transition a small shift in spectral energy of the valance band is found, in agreement with model predictions.

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Generalized Gradient Approximation Made Simple
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3865 · Cited by 215,824
Resonant bonding in crystalline phase-change materials
Shportko, K. V., Kremers, S., Woda, M., Lencer, D., Robertson, J., & Wuttig, M. (2008) · Nature Materials · doi:10.1038/nmat2226 · Cited by 1,153
Relativistic Band Structure and Electronic Properties of SnTe, GeTe, and PbTe
Tung, Y., & Cohen, M. L. (1969) · Physical Review · doi:10.1103/physrev.180.823 · Cited by 250
The crystal dynamics of lead telluride
Cochran, W., Cowley, R. A., Dolling, G., & Elcombe, M. M. (1966) · Proceedings of the Royal Society of London A Mathematical and Physical Sciences · doi:10.1098/rspa.1966.0182 · Cited by 221
The crystal structure of IV-VI compounds. I. Classification and description
Littlewood, P. B. (1980) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/13/26/009 · Cited by 207
Self-citation
SnTe Nanocrystals: A New Example of Narrow-Gap Semiconductor Quantum Dots
Kovalenko, M. V., Heiß, W., Shevchenko, E. V., Lee, J., Schwinghammer, H., Alivisatos, A. P., & Talapin, D. V. (2007) · Journal of the American Chemical Society · doi:10.1021/ja074481z · Cited by 169
Phase Transition in SnTe with Low Carrier Concentration
Iizumi, M., Hamaguchi, Y., F. Komatsubara, K., & Kato, Y. (1975) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.38.443 · Cited by 165
The crystal structure of IV-VI compounds. II. A microscopic model for cubic/rhombohedral materials
Littlewood, P. B. (1980) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/13/26/010 · Cited by 71
Self-citation
Weak-Field Magnetoresistance and the Valence-Band Structure of SnTe
Allgaier, R. S., & Houston, B. (1972) · Physical review. B, Solid state · doi:10.1103/physrevb.5.2186 · Cited by 68
Shubnikov-de Haas Effect in SnTe
Burke, J. R., Allgaier, R. S., Houston, B. B., Babiskin, J., & Siebenmann, P. G. (1965) · Physical Review Letters · doi:10.1103/physrevlett.14.360 · Cited by 62

Show all 12 references

Research works printed but not linked: 4

S. A. Gordyunin, 1974, Pis’ma Zh. Eksp. Teor. Fiz., 20, 668
S. A. Gordyunin, 1975, JETP Lett., 20, 307
B. A. Volkov, 1982, Fiz. Tekh. Poluprovodn., 16, 1734
B. A. Volkov, 1982, Sov. Phys. Semicond., 16, 1112

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Authors: Littlewood, P. B., Mihaila, B., Schulze, R. K., Safarik, D. J., Gubernatis, J. E., Bostwick, A., Rotenberg, E., Opeil, C. P., Durakiewicz, T., Smith, J. L., & Lashley, J. C.
Affiliations: University of Cambridge (GB)
Los Alamos National Laboratory (US)
Lawrence Berkeley National Laboratory (US)
Boston College (US)
ORCID: Littlewood, P. B.
Mihaila, B.
Schulze, R. K.
Safarik, D. J.
Bostwick, A.
Rotenberg, E.
Opeil, C. P.
Durakiewicz, T.
Smith, J. L.
Lashley, J. C.
Venue: Physical Review Letters
Publisher: American Physical Society (APS)
Published: 2010-08-20
Volume: 105
Issue: 8
Pages: 086404-086404
ISSN: 0031-9007 (ISSN-L)
1079-7114
DOI: 10.1103/physrevlett.105.086404
OpenAlex: W2031045756
Cited by: 106
References: 12
Citations by year: 2026: 4 · 2025: 4 · 2024: 2 · 2023: 5 · 2022: 2 · 2021: 10 · 2020: 4 · 2019: 12 · 2018: 12 · 2017: 8 · 2016: 6 · 2015: 6 · 2014: 12 · 2013: 11 · 2012: 5
FWCI: 3.25
Type: journal article
Language: en
Open access: green
arxiv.org
Licence: link.aps.org/licenses/aps-default-license (vor)
Locations: Physical Review Letters (publishedVersion)
PubMed (publishedVersion)
arXiv (Cornell University) (submittedVersion)
arXiv (Cornell University)
Topics: Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Topological Materials and Phenomena
Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
Keywords: SnTe, electronic band structure, Fermi surface, L point, P-band, tight-binding model, chemical potential, carrier concentration, valence band, angle-resolved photoemission

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Band Structure of SnTe Studied by Photoemission Spectroscopy

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