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Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields
Open accessAbstract
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a strong nonlinear behavior in the transport characteristics. The effective transport gap is typically 2 orders of magnitude smaller than the optical band gaps reported by infrared spectroscopy studies. Detailed temperature dependence measurements shed light on the different transport mechanisms in different temperature regimes.
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Cites
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033
Asymmetry gap in the electronic band structure of bilayer graphene
McCann, E. (2006) · Physical Review B · doi:10.1103/physrevb.74.161403 · Cited by 1,275
Cited by
Gate-tunable topological valley transport in bilayer graphene
Sui, M., Chen, G., Ma, L., Shan, W.-Y., Tian, D., Watanabe, K., Taniguchi, T., Jin, X., Yao, W., Xiao, D., et al. (2015) · Nature Physics · doi:10.1038/nphys3485 · Cited by 388
Gobbi, M., Orgiu, E., & Samorì, P. (2018) · Advanced Materials · doi:10.1002/adma.201706103 · Cited by 267
Metadata
- Authors
- Taychatanapat, T., & Jarillo-Herrero, P.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2010-10-11
- Volume
- 105
- Issue
- 16
- Pages
- 166601-166601
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1976946247
- Cited by
- 234
- References
- 2
- FWCI
- 11.12
- Type
- journal article
- Language
- en
- Open access
- green
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- Taychatanapat, T., & Jarillo-Herrero, P. (2010). Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields. Physical Review Letters. https://doi.org/10.1103/physrevlett.105.166601
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