The DOI matches its Crossref record; 13 of the 13 references it cites were found in a registry or an index.
Gate-Voltage Control of Chemical Potential and Weak Antilocalization inBi2Se3
Open accessAbstract
We report that Bi₂Se₃ thin films can be epitaxially grown on SrTiO₃ substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.
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Cites
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
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A topological Dirac insulator in a quantum spin Hall phase
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Cited by
Topological insulators and superconductors
Qi, X.-L., & Zhang, S.-C. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.1057 · Cited by 14,394
Topological Insulator Materials
Ando, Y. (2013) · Journal of the Physical Society of Japan · doi:10.7566/jpsj.82.102001 · Cited by 1,789
Colloquium : Topological band theory
Bansil, A., Lin, H., & Das, T. (2016) · Reviews of Modern Physics · doi:10.1103/revmodphys.88.021004 · Cited by 1,587
Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 Nanoplatelets
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Impurity Effect on Weak Antilocalization in the Topological InsulatorBi2Te3
He, H.-T., Wang, G., Zhang, T., Sou, I.-K., Wong, G. K. L., Wang, J.-N., Lu, H.-Z., Shen, S.-Q., & Zhang, F.-C. (2011) · Physical Review Letters · doi:10.1103/physrevlett.106.166805 · Cited by 477
Metadata
- Authors
- Chen, J., Qin, H. J., Yang, F., Liu, J., Guan, T., Qu, F. M., Zhang, G. H., Shi, J. R., Xie, X. C., Yang, C. L., Wu, K. H., Li, Y. Q., & Lu, L.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2010-10-19
- Volume
- 105
- Issue
- 17
- Pages
- 176602-176602
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1534547384
- Cited by
- 641
- References
- 13
- FWCI
- 32.40
- Type
- journal article
- Language
- en
- Open access
- green
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- Chen, J., Qin, H. J., Yang, F., Liu, J., Guan, T., Qu, F. M., Zhang, G. H., Shi, J. R., Xie, X. C., Yang, C. L., Wu, K. H., Li, Y. Q., & Lu, L. (2010). Gate-Voltage Control of Chemical Potential and Weak Antilocalization inBi2Se3. Physical Review Letters. https://doi.org/10.1103/physrevlett.105.176602
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