The DOI matches its Crossref record.
High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous SiO2and the Si-SiO2Interface
Abstract
The chemical structure of thin Si${\mathrm{O}}_{2}$ films and Si${\mathrm{O}}_{2}$-Si interfaces has been investigated using high-resolution x-ray photoelectron spectroscopy. The data are consistent with a continuous random network of four-, six-, seven-, and eight-member rings of Si${\mathrm{O}}_{4}$ tetrahedra joined together by bridging oxygens. This distribution changes substantially within 30 \AA{} of the Si${\mathrm{O}}_{2}$-Si interface. The near-interface region is comprised of ${\mathrm{Si}}_{2}$${\mathrm{O}}_{3}$, SiO, and ${\mathrm{Si}}_{2}$O. This structure is interpreted by means of a structure-induced-charge-transfer model.
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Cited by
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Scaling the gate dielectric: Materials, integration, and reliability
Buchanan, D. A. (1999) · IBM Journal of Research and Development · doi:10.1147/rd.433.0245 · Cited by 367
Metadata
- Authors
- Grunthaner, F. J., Grunthaner, P. J., Vasquez, R. P., Lewis, B. F., Maserjian, J., & Madhukar, A.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1979-11-26
- Volume
- 43
- Issue
- 22
- Pages
- 1683-1686
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W2005332140
- Cited by
- 365
- References
- 0
- FWCI
- 7.22
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous SiO2and the Si-SiO2Interface. https://app.cochat.ai/papers/10.1103/physrevlett.43.1683
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- Grunthaner, F. J., Grunthaner, P. J., Vasquez, R. P., Lewis, B. F., Maserjian, J., & Madhukar, A. (1979). High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous SiO2and the Si-SiO2Interface. Physical Review Letters. https://doi.org/10.1103/physrevlett.43.1683
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