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Universal conductance fluctuations in silicon inversion-layer nanostructures
Abstract
We measure the conductance variations of submicrometer inversion-layer segments in silicon devices, systematically changing the length, width, inelastic diffusion length, gate voltage, magnetic field, and temperature. Results agree with the theory of universal conductance fluctuations, demonstrating that random quantum interference causes rms conductance changes \ensuremath{\Delta}G=${e}^{2}$/h in each phase-coherent subunit of each segment. The random quantum interference is extremely sensitive to change of a single scatterer.
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Citations
Cites
Universal Conductance Fluctuations in Metals
Lee, P. A., & Stone, A. D. (1985) · Physical Review Letters · doi:10.1103/physrevlett.55.1622 · Cited by 1,369
Self-citation
Cited by
Localization: theory and experiment
Kramer, B., & MacKinnon, A. (1993) · Reports on Progress in Physics · doi:10.1088/0034-4885/56/12/001 · Cited by 1,926
Aharonov-Bohm effect in normal metal quantum coherence and transport
Washburn, S., & Webb, R. A. (1986) · Advances in Physics · doi:10.1080/00018738600101921 · Cited by 810
Conductance Oscillations Periodic in the Density of a One-Dimensional Electron Gas
Scott-Thomas, J. H. F., Field, S. B., Kastner, M. A., Smith, H. I., & Antoniadis, D. A. (1989) · Physical Review Letters · doi:10.1103/physrevlett.62.583 · Cited by 353
Persistent Currents in Normal Metal Rings
Bleszynski-Jayich, A. C., Shanks, W. E., Peaudecerf, B., Ginossar, E., von Oppen, F., Glazman, L., & Harris, J. G. E. (2009) · Science · doi:10.1126/science.1178139 · Cited by 337
Metadata
- Authors
- Skocpol, W. J., Mankiewich, P. M., Howard, R. E., Jackel, L. D., Tennant, D. M., & Stone, A. D.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1986-06-30
- Volume
- 56
- Issue
- 26
- Pages
- 2865-2868
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W2011322179
- Cited by
- 259
- References
- 1
- FWCI
- 25.79
- Type
- journal article
- Language
- en
- Open access
- closed
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- Skocpol, W. J., Mankiewich, P. M., Howard, R. E., Jackel, L. D., Tennant, D. M., & Stone, A. D. (1986). Universal conductance fluctuations in silicon inversion-layer nanostructures. Physical Review Letters. https://doi.org/10.1103/physrevlett.56.2865
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