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Reflection High-Energy Electron Diffraction (RHEED) Oscillations at 77 K

Egelhoff, W. F., Jacob, I.·1989·Physical Review Letters

Abstract

Strong intensity oscillations have been found in RHEED during epitaxial growth at 77 K. This temperature is too low for thermally activated diffusion and establishes that the deposited atom uses its latent heat of condensation to skip across the surface, preferentially coming to rest at growing island edges, to achieve quasi---layer-by-layer growth. This growth mechanism implies that RHEED oscillations should be observable at 0 K. The data also provide insight into the basic principles governing RHEED oscillations.

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Metadata

Authors
Egelhoff, W. F., & Jacob, I.
Venue
Physical Review Letters
Published
1989-02-20
Volume
62
Issue
8
Pages
921-924
ISSN
0031-9007 (ISSN-L)
OpenAlex
W2033844370
Cited by
294
References
0
FWCI
14.81
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Reflection High-Energy Electron Diffraction (RHEED) Oscillations at 77 K. https://app.cochat.ai/papers/10.1103/physrevlett.62.921
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Egelhoff, W. F., & Jacob, I. (1989). Reflection High-Energy Electron Diffraction (RHEED) Oscillations at 77 K. Physical Review Letters. https://doi.org/10.1103/physrevlett.62.921

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