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Cited by 221

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Intrinsic Electrical Properties of Individual Single-Walled Carbon Nanotubes with Small Band Gaps

Zhou, Chongwu, Kong, Jing, Dai, Hongjie·2000·Physical Review Letters

Abstract

Individual single-walled carbon nanotubes (SWNT) exhibiting small band gaps on the order of 10 meV are observed for the first time in electron transport measurements. Transport through the valence or conduction band of a small-gap semiconducting SWNT (SGS-SWNT) can be tuned by a nearby gate voltage. Intrinsic electrical properties of the Ohmically contacted SGS-SWNT are elucidated. An SGS-SWNT exhibits metal- or semiconductorlike characteristics depending on the Fermi level position in the band structure.

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Metadata

Authors
Zhou, C., Kong, J., & Dai, H.
Venue
Physical Review Letters
Published
2000-06-12
Volume
84
Issue
24
Pages
5604-5607
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2078263322
Cited by
221
References
1
FWCI
8.49
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Intrinsic Electrical Properties of Individual Single-Walled Carbon Nanotubes with Small Band Gaps. https://app.cochat.ai/papers/10.1103/physrevlett.84.5604
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Zhou, C., Kong, J., & Dai, H. (2000). Intrinsic Electrical Properties of Individual Single-Walled Carbon Nanotubes with Small Band Gaps. Physical Review Letters. https://doi.org/10.1103/physrevlett.84.5604

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