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Cited by 275

The DOI matches its Crossref record; 18 of the 18 references it cites were found in a registry or an index.

Orbitronics: The Intrinsic Orbital Current inp-Doped Silicon

Open access
Bernevig, B. Andrei, Hughes, Taylor L., Zhang, Shou-Cheng·2005·Physical Review Letters

Abstract

The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that an electric field in p-doped silicon can induce a dissipationless orbital current in a fashion reminiscent of the spin Hall effect. The vertex correction from impurity scattering vanishes and the effect is robust against disorder. The orbital Hall effect leads to accumulation of local orbital momentum at the edge of the sample, and can be detected by the Kerr effect.

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Crossref · 10.1103/physrevlett.95.066601

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Metadata

Authors
Bernevig, B. A., Hughes, T. L., & Zhang, S.-C.
Venue
Physical Review Letters
Published
2005-08-01
Volume
95
Issue
6
Pages
066601-066601
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W1564345469
Cited by
275
References
18
FWCI
1.84
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Orbitronics: The Intrinsic Orbital Current inp-Doped Silicon. https://app.cochat.ai/papers/10.1103/physrevlett.95.066601
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Bernevig, B. A., Hughes, T. L., & Zhang, S.-C. (2005). Orbitronics: The Intrinsic Orbital Current inp-Doped Silicon. Physical Review Letters. https://doi.org/10.1103/physrevlett.95.066601

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.