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New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
Abstract
In this paper it is demonstrated in a wide stress field range that breakdown in thin oxide layers occurs as soon as a critical density of neutral electron traps in the oxide is reached. It is proven that this corresponds to a critical hole fluence, since a unique relationship between electron trap generation and hole fluence is found independent of stress field and oxide thickness. In this way literature models relating breakdown to hole fluence or to trap generation are linked. A new model for intrinsic breakdown, based on a percolation concept, is proposed. It is shown that this model can explain the experimentally observed statistical features of the breakdown distribution, such as the increasing spread of the Q/sub BD/-distribution for ultrathin oxides. An important consequence of this large spread is the strong area dependence of the Q/sub BD/ for ultrathin oxides.
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Citations
Cited by
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Ribes, G., Mitard, J., Denais, M., Bruyere, S., Monsieur, F., Parthasarathy, C., Vincent, E., & Ghibaudo, G. (2005) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2005.845236 · Cited by 533
Thermochemical description of dielectric breakdown in high dielectric constant materials
McPherson, J., Kim, J.-Y., Shanware, A., & Mogul, H. (2003) · Applied Physics Letters · doi:10.1063/1.1565180 · Cited by 398
Time dependent dielectric breakdown physics – Models revisited
McPherson, J. W. (2012) · Microelectronics Reliability · doi:10.1016/j.microrel.2012.06.007 · Cited by 268
Palumbo, F., Wen, C., Lombardo, S., Pazos, S., Aguirre, F., Eizenberg, M., Hui, F., & Lanza, M. (2020) · Advanced Functional Materials · doi:10.1002/adfm.201900657 · Cited by 268
Metadata
- Authors
- Degraeve, R., Groeseneken, G., Bellens, R., Ogier, J. L., Depas, M., Roussel, P. J., & Maes, H. E.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1998-04
- Volume
- 45
- Issue
- 4
- Pages
- 904-911
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2113488650
- Cited by
- 656
- References
- 0
- FWCI
- 41.33
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: New insights in the relation between electron trap generation and the statistical properties of oxide breakdown. https://app.cochat.ai/papers/10.1109/16.662800
- The paper
- Degraeve, R., Groeseneken, G., Bellens, R., Ogier, J. L., Depas, M., Roussel, P. J., & Maes, H. E. (1998). New insights in the relation between electron trap generation and the statistical properties of oxide breakdown. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.662800
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
