The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Thermochemical description of dielectric breakdown in high dielectric constant materials
Abstract
A thermochemical/molecular model is developed for breakdown in high dielectric constant materials and the model suggests that a fundamental relationship exists between dielectric breakdown strength (Ebd) and dielectric constant (k). The model indicates that Ebd should show an approximate (k)−1/2 dependence over a wide range of high dielectric constant materials. The model also predicts that the field-acceleration parameter (γ), from time-dependent dielectric breakdown (TDDB) testing, should increase with dielectric constant. TDDB and Ebd data are presented for model support. The thermochemical model suggests that the very high local electric field (Lorentz-relation/Mossotti-field) in high-k dielectrics tends to distort/weaken the polar molecular bonds making them more susceptible to bond breakage by standard Boltzmann processes and/or by hole capture and thus lowers the breakdown strength.
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Cites
Degraeve, R., Groeseneken, G., Bellens, R., Ogier, J. L., Depas, M., Roussel, P. J., & Maes, H. E. (1998) · IEEE Transactions on Electron Devices · doi:10.1109/16.662800 · Cited by 656
McPherson, J. W., & Mogul, H. C. (1998) · Journal of Applied Physics · doi:10.1063/1.368217 · Cited by 507
Self-citationElectrical properties of hafnium silicate gate dielectrics deposited directly on silicon
Wilk, G. D., & Wallace, R. M. (1999) · Applied Physics Letters · doi:10.1063/1.124036 · Cited by 504
Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics
McPherson, J. W., Khamankar, R., & Shanware, A. (2000) · Journal of Applied Physics · doi:10.1063/1.1318369 · Cited by 194
Self-citationMcPherson, J. W., & Khamankar, R. (2000) · Semiconductor Science and Technology · doi:10.1088/0268-1242/15/5/305 · Cited by 90
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Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
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Guan, X., Yu, S., & Wong, H.-S. P. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2184545 · Cited by 355
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Metadata
- Authors
- McPherson, J., Kim, J.-Y., Shanware, A., & Mogul, H.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2003-03-31
- Volume
- 82
- Issue
- 13
- Pages
- 2121-2123
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1983436117
- Cited by
- 398
- References
- 5
- FWCI
- 7.37
- Type
- journal article
- Language
- en
- Open access
- closed
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- McPherson, J., Kim, J.-Y., Shanware, A., & Mogul, H. (2003). Thermochemical description of dielectric breakdown in high dielectric constant materials. Applied Physics Letters. https://doi.org/10.1063/1.1565180
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
