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Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Open accessAbstract
The dc small-signal, and microwave power output characteristics of AlGaN/GaN HEMTs are presented. A maximum drain current greater than 1 A/mm and a gate-drain breakdown voltage over 80 V have been attained. For a 0.4 /spl mu/m gate length, an f/sub T/ of 30 GHz and an f/sub max/ of 70 GHz have been demonstrated. Trapping effects, attributed to surface and buffer layers, and their relationship to microwave power performance are discussed. It is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer. Through a reduction of these trapping effects, a CW power density of 3.3 W/mm and a pulsed power density of 6.7 W/mm have been achieved at 3.8 GHz.
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Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Trapping effects in GaN and SiC microwave FETs
Binari, S. C., Klein, P. B., & Kazior, T. E. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021569 · Cited by 470
Self-citationKlein, P. B., Binari, S. C., Ikossi, K., Wickenden, A. E., Koleske, D. D., & Henry, R. L. (2001) · Applied Physics Letters · doi:10.1063/1.1418452 · Cited by 288
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Metadata
- Authors
- Binari, S. C., Ikossi, K., Roussos, J. A., Kruppa, W., Park, D., Dietrich, H. B., Koleske, D. D., Wickenden, A. E., & Henry, R. L.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2001-03
- Volume
- 48
- Issue
- 3
- Pages
- 465-471
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2147521755
- Cited by
- 656
- References
- 0
- FWCI
- 27.41
- Type
- journal article
- Language
- en
- Open access
- green
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- Binari, S. C., Ikossi, K., Roussos, J. A., Kruppa, W., Park, D., Dietrich, H. B., Koleske, D. D., Wickenden, A. E., & Henry, R. L. (2001). Trapping effects and microwave power performance in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.906437
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