The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
Abstract
The two deep traps responsible for current collapse in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy have been studied by photoionization spectroscopy. Varying the growth pressure of the high resistivity GaN buffer layer results in a change in the deep trap incorporation that is reflected in the observed current collapse. Variations in the measured trap concentrations with growth pressure and carbon incorporation indicate that the deepest trap is a carbon-related defect, while the mid-gap trap may be associated with grain boundaries or dislocations.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Mechanism of Yellow Luminescence in GaN
Ogino, T., & Aoki, M. (1980) · Japanese Journal of Applied Physics · doi:10.1143/jjap.19.2395 · Cited by 686
Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Binari, S. C., Ikossi, K., Roussos, J. A., Kruppa, W., Park, D., Dietrich, H. B., Koleske, D. D., Wickenden, A. E., & Henry, R. L. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.906437 · Cited by 656
Self-citationParish, G., Keller, S., DenBaars, S. P., & Mishra, U. K. (2000) · Journal of Electronic Materials · doi:10.1007/s11664-000-0087-3 · Cited by 144
Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Trapping effects in GaN and SiC microwave FETs
Binari, S. C., Klein, P. B., & Kazior, T. E. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021569 · Cited by 470
Self-citation
Metadata
- Authors
- Klein, P. B., Binari, S. C., Ikossi, K., Wickenden, A. E., Koleske, D. D., & Henry, R. L.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2001-11-19
- Volume
- 79
- Issue
- 21
- Pages
- 3527-3529
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2016425570
- Cited by
- 288
- References
- 3
- FWCI
- 7.16
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy. https://app.cochat.ai/papers/10.1063/1.1418452
- The paper
- Klein, P. B., Binari, S. C., Ikossi, K., Wickenden, A. E., Koleske, D. D., & Henry, R. L. (2001). Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy. Applied Physics Letters. https://doi.org/10.1063/1.1418452
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
