The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Undoped AlGaN/GaN HEMTs for microwave power amplification
Abstract
Undoped AlGaN/GaN structures are used to fabricate high electron mobility transistors (HEMTs). Using the strong spontaneous and piezoelectric polarization inherent in this crystal structure a two-dimensional electron gas (2DEG) is induced. Three-dimensional (3-D) nonlinear thermal simulations are made to determine the temperature rise from heat dissipation in various geometries. Epitaxial growth by MBE and OMVPE are described, reaching electron mobilities of 1500 and 1700 cm/sup 2//Ns, respectively, For electron sheet density near 1/spl times/10/sup 13//cm/sup 2/, Device fabrication is described, including surface passivation used to sharply reduce the problematic current slump (dc to rf dispersion) in these HEMTs. The frequency response, reaching an intrinsic f/sub t/ of 106 GHz for 0.15 /spl mu/m gates, and drain-source breakdown voltage dependence on gate length are presented. Small periphery devices on sapphire substrates have normalized microwave output power of /spl sim/4 W/mm, while large periphery devices have /spl sim/2 W/mm, both thermally limited. Performance, without and with Si/sub 3/N/sub 4/ passivation are presented. On SiC substrates, large periphery devices have electrical limits of 4 W/mm, due in part to the limited development of the substrates.
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Cites
Ambacher, O., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Schaff, W. J., Eastman, L. F., Dimitrov, R., Wittmer, L., et al. (1999) · Journal of Applied Physics · doi:10.1063/1.369664 · Cited by 3,022
Self-citationAmbacher, O., Foutz, B., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Sierakowski, A. J., Schaff, W. J., Eastman, L. F., et al. (2000) · Journal of Applied Physics · doi:10.1063/1.371866 · Cited by 1,744
Self-citationThe effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
Green, B. M., Chu, K. K., Chumbes, E. M., Smart, J. A., Shealy, J. R., & Eastman, L. F. (2000) · IEEE Electron Device Letters · doi:10.1109/55.843146 · Cited by 744
Self-citationScattering of electrons at threading dislocations in GaN
Weimann, N. G., EASTMAN, L. F., Doppalapudi, D., Ng, H. M., & Moustakas, T. D. (1998) · Journal of Applied Physics · doi:10.1063/1.366585 · Cited by 618
Self-citationYellow luminescence and related deep states in undoped GaN
Calleja, E., Sanchez, F. J., Basak, D., Sanchez-Garcia, M. A., Muñoz, E., Izpura, I., Calle, F., Tijero, J. M. G., Sánchez-Rojas, J. L., Beaumont, B., et al. (1997) · Physical review. B, Condensed matter · doi:10.1103/physrevb.55.4689 · Cited by 217
Cited by
Wang, K., Hu, W., Wu, S., Wang, H., Padhiar, M. A., & Ji, Y. (2024) · Physica Scripta · doi:10.1088/1402-4896/ad4b69 · Cited by 5
Metadata
- Authors
- Eastman, L. F., Tilak, V., Smart, J., Green, B. M., Chumbes, E. M., Dimitrov, R., Kim, H., Ambacher, O. S., Weimann, N., Prunty, T., Murphy, M., Schaff, W. J., & Shealy, J. R.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2001-03
- Volume
- 48
- Issue
- 3
- Pages
- 479-485
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2167125973
- Cited by
- 389
- References
- 5
- FWCI
- 30.07
- Type
- journal article
- Language
- en
- Open access
- closed
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- Eastman, L. F., Tilak, V., Smart, J., Green, B. M., Chumbes, E. M., Dimitrov, R., Kim, H., Ambacher, O. S., Weimann, N., Prunty, T., Murphy, M., Schaff, W. J., & Shealy, J. R. (2001). Undoped AlGaN/GaN HEMTs for microwave power amplification. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.906439
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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