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The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
Abstract
Surface passivation of undoped AlGaN/CaN HEMT's reduces or eliminates the surface effects responsible for limiting both the RF current and breakdown voltages of the devices. Power measurements on a 2×125×0.5 μm AlGaN/GaN sapphire based HEMT demonstrate an increase in 4 GHz saturated output power from 1.0 W/mm [36% peak power-added efficiency (PAE)] to 2.0 W/mm (46% peak PAE) with 15 V applied to the drain in each case. Breakdown measurement data show a 25% average increase in breakdown voltage for 0.5 μm gate length HEMT's on the same wafer. Finally, 4 GHz power sweep data for a 2×75×0.4 μm AlGaN/GaN HEMT on sapphire processed using the Si3N4passivation layer produced 4.0 W/mm saturated output power at 41% PAE (25 V drain bias). This result represents the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's.
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Cited by
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
Vetury, R., Zhang, N. Q., Keller, S., & Mishra, U. K. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.906451 · Cited by 1,453
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Trapping effects in GaN and SiC microwave FETs
Binari, S. C., Klein, P. B., & Kazior, T. E. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021569 · Cited by 470
Undoped AlGaN/GaN HEMTs for microwave power amplification
Eastman, L. F., Tilak, V., Smart, J., Green, B. M., Chumbes, E. M., Dimitrov, R., Kim, H., Ambacher, O. S., Weimann, N., Prunty, T., et al. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.906439 · Cited by 389
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Metadata
- Authors
- Green, B. M., Chu, K. K., Chumbes, E. M., Smart, J. A., Shealy, J. R., & Eastman, L. F.
- Venue
- IEEE Electron Device Letters
- Published
- 2000-06
- Volume
- 21
- Issue
- 6
- Pages
- 268-270
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2103281872
- Cited by
- 744
- References
- 0
- FWCI
- 37.69
- Type
- journal article
- Language
- en
- Open access
- closed
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- Green, B. M., Chu, K. K., Chumbes, E. M., Smart, J. A., Shealy, J. R., & Eastman, L. F. (2000). The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs. IEEE Electron Device Letters. https://doi.org/10.1109/55.843146
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