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Very-high power density AlGaN/GaN HEMTs
Abstract
Research work focusing on the enhancement of large-signal current-voltage (I-V) capabilities has resulted in significant performance improvement for AlGaN/GaN HEMT's. 100-150 /spl mu/m wide devices grown on SiC substrates demonstrated a record power density of 9.8 W/mm at 8 GHz, which is about ten times higher than GaAs-based FETs; similar devices grown on sapphire substrates showed 6.5 W/mm, which was thermally limited, 2-mm-wide devices flip-chip mounted on to AlN substrates produced 9.2-9.8 W output power at 8 GHz with 44-47% PAE. A flip-chip amplifier IC using a 4-mm device generated 14 W at 8 GHz, representing the highest CW power obtained from GaN-based integrated circuits to date.
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Cited by
AlGaN/GaN HEMTs—An Overview of Device Operation and Applications
Mishra, U. K., Parikh, P., & Wu, Y.-F. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021567 · Cited by 2,312
Self-citationMeasurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
Kuball, M., Hayes, J. M., Uren, M. J., Martin, I., Birbeck, J. C. H., Balmer, R. S., & Hughes, B. T. (2002) · IEEE Electron Device Letters · doi:10.1109/55.974795 · Cited by 358
Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
Okumura, H. (2006) · Japanese Journal of Applied Physics · doi:10.1143/jjap.45.7565 · Cited by 347
InAlGaN/GaN HEMTs at Cryogenic Temperatures
Dogmus, E., Kabouche, R., Lepilliet, S., Linge, A., Zegaoui, M., Ben-Ammar, H., Chauvat, M.-P., Ruterana, P., Gamarra, P., Lacam, C., et al. (2016) · Electronics · doi:10.3390/electronics5020031 · Cited by 37
Metadata
- Authors
- Wu, Y.-F., Kapolnek, D., Ibbetson, J. P., Parikh, P., Keller, B. P., & Mishra, U. K.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2001-03
- Volume
- 48
- Issue
- 3
- Pages
- 586-590
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2029837243
- Cited by
- 568
- References
- 0
- FWCI
- 24.95
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wu, Y.-F., Kapolnek, D., Ibbetson, J. P., Parikh, P., Keller, B. P., & Mishra, U. K. (2001). Very-high power density AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.906455
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