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Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
Open accessAbstract
High-power device technology is a key technological factor for wireless communication, which is one of the information network infrastructures in the 21st century, as well as power electronics innovation, which contributes considerably to solving the energy saving problem in the future energy network. Widegap semiconductors, such as SiC and GaN, are strongly expected as high-power high-frequency devices and high-power switching devices owing to their material properties. In this paper, the present status and future prospect of these widegap semiconductor high-power devices are reviewed, in the context of applications in wireless communication and power electronics.
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Cites
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Cited by
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Metadata
- Authors
- Okumura, H.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 2006-10-01
- Volume
- 45
- Issue
- 10R
- Pages
- 7565
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2086023756
- Cited by
- 347
- References
- 50
- FWCI
- 10.12
- Type
- journal article
- Language
- en
- Open access
- bronze
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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